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S1G-T1

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size41KB,3 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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S1G-T1 Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

S1G-T1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-609 codee0
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage400 V
Maximum reverse recovery time2.5 µs
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
W TE
PO WE R SEM IC O ND UC TO R S
S1A – S1M
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
Features
!
!
!
!
!
!
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Glass Passivated Die Construction
Ideally Suited for Automatic Assembly
Low Forward Voltage Drop
Surge Overload Rating to 30A Peak
Low Power Loss
Built-in Strain Relief
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
D
A
F
C
H
G
E
Mechanical Data
!
!
!
!
!
Case: Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.093 grams (approx.)
SMB/DO-214AA
Dim
Min
Max
A
3.30
3.94
B
4.06
4.70
C
1.91
2.11
D
0.152
0.305
E
5.08
5.59
F
2.13
2.44
G
0.051
0.203
H
0.76
1.27
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @T
L
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
S1A
@T
A
=25°C unless otherwise specified
S1B
S1D
S1G
S1J
S1K
S1M
Unit
50
35
100
70
200
140
400
280
1.0
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
JL
T
j,
T
STG
30
1.10
5.0
200
2.5
15
30
-65 to +175
A
V
µA
µS
pF
K/W
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
S1A – S1M
1 of 3
© 2002 Won-Top Electronics

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Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC

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