INCHANGE Semiconductor
isc
Product Specification
isc N-Channel MOSFET Transistor
2SK2251-01
DESCRIPTION
·Drain
Current I
D
= 2A@ T
C
=25℃
·Drain
Source Voltage-
: V
DSS
= 250V(Min)
·Fast
Switching Speed
APPLICATIONS
·Switching
regulators
·UPS
·DC-DC
converters
·General
purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
DSS
V
GS
I
D
I
D(puls)
P
tot
T
j
T
stg
ARAMETER
Drain-Source Voltage (V
GS
=0)
Gate-Source Voltage
Drain Current-continuous@ TC=25℃
Pulse Drain Current
Total Dissipation@T
C
=25℃
Max. Operating Junction Temperature
Storage Temperature Range
VALUE
250
±30
UNIT
V
V
A
A
W
℃
℃
2
8
20
150
-55~150
·THERMAL
CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
6.25
75
UNIT
℃/W
℃/W
isc website：www.iscsemi.cn
PDF pdfFactory Pro
1
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc
Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL
CHARACTERISTICS (T
C
=25℃)
2SK2251-01
SYMBOL
PARAMETER
CONDITIONS
MIN
TYPE
MAX
UNIT
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
= 0; I
D
= 1mA
250
V
V
GS
(th
)
V
SD
Gate Threshold Voltage
V
DS
= V
GS
; I
D
=1mA
2.5
3.0
3.5
V
Forward On-Voltage
I
S
=5A; V
GS
=0
0.9
1.4
V
Ω
R
DS(
on
)
I
GSS
Drain-Source On-Resistance
V
GS
= 10V; I
D
= 1A
V
GS
=
±30V;V
DS
= 0
1.2
2.0
±100
Gate-Body Leakage Current
nA
µA
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 250V; V
GS
= 0
500
C
iss
Input Capacitance
V
DS
=10V;
V
GS
=0V;
f
T
=1MHz
250
380
C
rss
Reverse Transfer Capacitance
15
25
pF
C
oss
Output Capacitance
50
80
t
r
Rise Time
V
GS
=10V;
12
30
t
d(on)
Turn-on Delay Time
I
D
=2A;
V
DD
=150V;
25
40
ns
t
f
Fall Time
R
L
=10Ω
15
25
t
d(off)
Turn-off Delay Time
50
80
isc website：www.iscsemi.cn
PDF pdfFactory Pro
2
isc & iscsemi is registered trademark
www.fineprint.cn
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