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HER306

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size56KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
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HER306 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

R
HER301 TH R U HER308
HIGH EFFICIENCY RECTIFIER
Reverse Voltage: 50 to 1000 Volts
Forward Current:3.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Diffused junction
High current capability
Low power loss, high efficiency
Low forward voltage drop
Low leakage
High temperature soldering guaranteed:260
°
C/10 seconds at terminals
Component in accordance to RoHS 2011
/
65
/
EU
DO-201AD
1.0(25.4)
MIN
0.210(5.3)
0.190(4.8)
DIA
0.375(9.50)
0.285(7.20)
MECHANICAL DATA
Case: JEDED DO-201AD molded plastic body
Lead: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052(1.32)
0.045(1.14)
DIA
1.0(25.4)
MIN
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating at 25
°
C ambient temperature unless otherwise specified. Single phase ,half wave ,60H
Z
,resistive or inductive
load. For capacitive load, derate current by 20%.)
Symbols
Maximum Recurrent peak reverse voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
at 3.0 A
Maximum DC Reverse Current
at rated DC blocking voltage
T
A
=25
°
C
HER
301
50
35
50
HER
302
100
70
100
HER
303
200
140
200
HER
304
300
210
300
3.0
HER
305
400
280
400
HER
306
600
420
600
HER
307
800
560
800
HER
308
1000
700
1000
Units
V
olts
V
olts
V
olts
A
mpS
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
150.0
1.0
1.3
10.0
150
1.7
V
olts
μ
A
75
50
T
A
=100
°
C
Maximum reverse recovery time(Note1)
Typical junction capacitance(Note2)
Operating junction and storage temperature
range
T
rr
C
J
T
J
T
STG
50
70
-55 to+125
-55 to+150
ns
P
F
°C
Note:
1.Test conditions: I
F=
0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1MH
Z
and applied reverse voltage of 4.0 Volts.
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM

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