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2SA1812-HF_15

Description
PNP Transistors
File Size1MB,3 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

2SA1812-HF_15 Overview

PNP Transistors

SMD Type
PNP Transistors
2SA1812-HF
Transistors
1.70
0.1
Features
High breakdown voltage, BV
CEO
=-400V.
High switching speed, typically tf :1us at I
C
=-100mA.
●High-voltage
Switching Transistor
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1.Base
2.Collector
3.Emitter
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
stg
Rating
-400
-400
-7
-0.5
-1
0.5
2
150
-55 to 150
A
W
V
Unit
Note.1: When mounted on a 40X40X0.7mm ceramic board.
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Turn-on time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
t
on
t
stg
t
f
C
ob
f
T
Test Conditions
Ic= -100 μA, I
E
=0
Ic= -1 mA, I
B
=0
I
E
= -100μA, I
C
=0
V
CB
= -400 V , I
E
=0
V
EB
= -6V , I
C
=0
I
C
=-100 mA, I
B
=-10mA
I
C
=-100 mA, I
B
=-10mA
V
CE
= -5V, I
C
= -50mA
I
C
= -100mA, R
L
= 1.5kΩ
I
B1
= -I
B2
=-10mA
V
CC
= 0 to -150V
V
CB
= -10V, I
E
= 0,f=1MHz
V
CE
= -5V, I
E
= 50mA,f=5MHz
82
0.6
2.7
1
18
12
pF
MHz
uS
Min
-400
-400
-7
-10
-10
-1
-1.2
270
uA
V
V
Typ
Max
Unit
Marking
Marking
AJ*
F
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