2SC2714_15 datasheet, PDF - EEWORLD Datasheet

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2SC2714_15: DescriptionNPN Plastic-Encapsulate Transistor; File Size707KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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NPN Plastic-Encapsulate Transistor

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2SC2714

Elektronische Bauelemente

0.02A , 40V

NPN Plastic-Encapsulate Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



SOT-23

A

3

Small reverse Transfer Capacitance：Cre=0.7pF(typ.)

Low Noise Figure：NF=2.5dB(typ.)(f=100MHz)

L

Top View

C B

1

2

CLASSIFICATION OF h

FE

Product-Rank

Range

Marking

2SC2714-R

40~80

QR

2SC2714-O

70~140

QO

2SC2714-Y

100~200

QY

F

K

1

E

D

G

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

2.80

3.04

2.10

2.55

1.20

1.40

0.89

1.15

1.78

2.04

0.30

0.50

H

J

Millimeter

Min.

Max.

0.09

0.18

0.45

0.60

0.08

0.177

0.6 REF.

0.89

1.02

PACKAGE INFORMATION

Package

SOT-23

MPQ

3K

LeaderSize

7’ inch

REF.

G

H

J

K

L

Collector





Base



Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

40

30

4

20

100

125, -55~125

Unit

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Transition Frequency

Reverse Transfer Capacitance

Noise Figure

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

f

T

C

re

NF

Min.

40

30

4

-

40

-

Typ.

-

550

0.7

2.5

Max.

-

0.5

200

-

5

Unit

V

μA

MHz

pF

dB

Test Condition

I

C

=10μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10μA, I

C

=0

V

CB

=18V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=6V, I

C

=1mA

V

CE

=6V, I

C

=1mA

V

CB

=6V, I

E

=0, f=1MHz

V

CE

=6V, I

C

=1mA, f=100MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

14-Mar-2011 Rev. A

Page 1 of 3

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