INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SB982
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -150V(Min)
·Good
Linearity of h
FE
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-150
V
V
CEO
Collector-Emitter Voltage
-150
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-9
A
I
CP
Collector Current-Pulse
Collector Power Dissipation
@ T
C
=25℃
-15
A
100
W
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
3
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc website
：
www.iscsemi.cn
1
isc & iscsemi
is registered trademark
INCHANGE
Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB982
MAX
UNIT
V
CE
(sat)
V
BE
(on)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= -7A; I
B
= -0.7A
-2.0
V
Base -Emitter On Voltage
I
C
= -7A; V
CE
= -5V
-1.8
V
μ A
μ A
Collector Cutoff Current
V
CB
= -150V; I
E
= 0
-50
I
EBO
Emitter Cutoff Current
V
EB
= -3V; I
C
= 0
-50
h
FE-1
DC Current Gain
I
C
= -20mA; V
CE
= -5V
20
h
FE-2
h
FE-3
DC Current Gain
I
C
= -1A; V
CE
= -5V
I
C
= -7A; V
CE
= -5V
60
200
DC Current Gain
20
f
T
Current-Gain—Bandwidth Product
I
C
= -0.5A; V
CE
= -5 V; f= 1MHz
200
MHz
h
FE-2
Classifications
Q
60-120
S
80-160
P
100-200
isc website
：
www.iscsemi.cn
2
isc & iscsemi
is registered trademark
Industrial Control Electronics
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