DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, 2 columns
M3D118
BY328
Damper diode
Product specification
Supersedes data of May 1996
1996 Sep 30
Philips Semiconductors
Product specification
Damper diode
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack
•
Also available with preformed leads
for easy insertion.
APPLICATIONS
•
Damper diode in high frequency
horizontal deflection circuits up to
38 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
BY328
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
2/3 page
k
(Datasheet)
Fig.1 Simplified outline (SOD64) and symbol.
,
a
MAM104
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
R
I
FWM
PARAMETER
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
T
tp
= 55
°C;
lead length = 10 mm
see Fig.2
T
amb
= 55
°C;
PCB mounting (see
Fig.5); see Fig.2
T
amb
= 55
°C;
PCB mounting (see
Fig.4); see Fig 2
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
CONDITIONS
MIN.
−
−
−
−
−
−
−
−
MAX.
1500
1500
1400
6.0
4.7
3.0
10
60
V
V
V
A
A
A
A
A
UNIT
T
stg
T
j
storage temperature
junction temperature
−65
−65
+175
+150
°C
°C
1996 Sep 30
2
Philips Semiconductors
Product specification
Damper diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
t
rr
PARAMETER
forward voltage
reverse current
reverse recovery time
CONDITIONS
I
F
= 5 A; T
j
= T
j max
; see Fig.3
I
F
= 5 A; see Fig.3
V
R
= V
Rmax
; T
j
= 150
°C
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.6
when switched to I
F
= 5 A in 50 ns;
T
j
= T
j max
; see Fig.7
BY328
MAX.
1.35
1.45
150
500
V
V
UNIT
µA
ns
t
fr
forward recovery time
500
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
mounted as shown in Fig.5
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.4.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
lead length = 10 mm
VALUE
25
75
40
UNIT
K/W
K/W
K/W
1996 Sep 30
3
Philips Semiconductors
Product specification
Damper diode
GRAPHICAL DATA
MBH413
BY328
handbook, halfpage
4
handbook, halfpage
5
MBE936
Ptot
(W)
3
IF
(A)
4
3
2
2
1
1
0
0
2
4
6
IFWM (A)
Solid line: basic high-voltage E/W modulator circuit; see Fig.8.
Dotted line: basic conventional horizontal deflection circuit; see Fig.9.
Curves include power dissipation due to switching losses.
8
0
0
1
VF (V)
2
Dotted line: T
j
= 150
°C;
solid line: T
j
= 25
°C.
Fig.2
Maximum total power dissipation as a
function of working peak forward current.
Fig.3
Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
handbook, halfpage
35
10
50
25
7
50
3 cm
2
copper
3 cm
2
copper
30
2
3
MGA200
10
MGA204
25.4
Dimensions in mm.
Dimensions in mm.
Fig.5
Fig.4 Device mounted on a printed-circuit board.
Mounting with additional printed circuit
board for heat sink purposes.
1996 Sep 30
4
Philips Semiconductors
Product specification
Damper diode
BY328
handbook, full pagewidth
DUT
+
IF
(A)
0.5
1
Ω
t rr
10
Ω
25 V
50
Ω
0
0.25
0.5
IR
(A)
1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; t
r
≤
7 ns.
Source impedance: 50
Ω;
t
r
≤
15 ns.
Fig.6 Test circuit and reverse recovery time waveform and definition.
handbook, halfpage
MGD600
VF
90%
100%
t fr
IF
t
10%
t
Fig.7 Forward recovery time definition.
1996 Sep 30
5
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