JMnic
Product Specification
Silicon PNP Power Transistors
2SB954 2SB954A
DESCRIPTION
・With
TO-220Fa package
・High
forward current transfer ratio h
FE
which has satisfactory linearity
・Low
collector saturation voltage
APPLICATIONS
・For
power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SB954
V
CBO
Collector-base voltage
2SB954A
2SB954
V
CEO
Collector-emitter voltage
2SB954A
V
EBO
I
C
I
CM
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
℃
℃
Open collector
Open base
-80
-5
-1
-2
2
W
V
A
A
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
1
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2SB954
I
C
=-30mA ;I
B
=0
2SB954A
I
C
=-1.0A ;I
B
=-0.125A
I
C
=-1A ; V
CE
=-4V
2SB954
2SB954A
2SB954
2SB954A
V
CE
=-30V; I
B
=0
CONDITIONS
2SB954 2SB954A
MIN
-60
TYP.
MAX
UNIT
V
CEO
Collector-emitter
voltage
V
-80
-1.0
-1.3
V
V
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter voltage
I
CEO
Collector
cut-off current
-300
V
CE
=-60V; I
B
=0
V
CE
=-60V; V
BE
=0
-200
V
CE
=-80V; V
BE
=0
V
EB
=-5V; I
C
=0
I
C
=-0.2A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-4V
I
C
=-0.2A; V
CE
=-5V,f=10MHz
70
15
30
0.5
I
C
=-1A ;V
CC
=-50V
I
B1
=-0.1A, I
B2
=0.1A
1.2
0.3
-1
250
μA
I
CES
Collector
cut-off current
μA
I
EBO
h
FE-1
h
FE-2
f
T
t
on
t
s
t
f
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Trun-on time
Storage time
Fall time
mA
MHz
μs
μs
μs
h
FE-1
Classifications
Q
70-150
P
120-250
2
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