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BY329F

Description
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
File Size44KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BY329F Overview

Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes

Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY329F, BY329X series
SYMBOL
QUICK REFERENCE DATA
V
R
= 800 V/ 1000 V/ 1200 V
k
1
a
2
I
F(AV)
= 8 A
I
FSM
65 A
t
rr
145 ns
GENERAL DESCRIPTION
Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft
recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies.
The BY329F series is supplied in the conventional leaded SOD100 package.
The BY329X series is supplied in the conventional leaded SOD113 package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD100
case
SOD113
case
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(AV)
PARAMETER
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
hs
83 ˚C
sinusoidal; a = 1.57;
T
hs
90 ˚C
t = 25
µs; δ
= 0.5;
T
hs
83 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior
to surge; with reapplied
V
RWM(max)
t = 10 ms
CONDITIONS
BY329F / BY329X
-
-
-
-
-
-
-
-
-
MIN.
-800
800
800
600
MAX.
-1000 -1200
1000 1200
1000
800
8
7
11
16
65
71
1200
1000
UNIT
V
V
V
A
A
A
A
A
A
I
F(RMS)
I
FRM
I
FSM
RMS forward current
Peak repetitive forward current
Peak non-repetitive forward
current.
I
2
t
T
stg
T
j
I
2
t for fusing
Storage temperature
Operating junction temperature
-
-40
-
28
150
150
A
2
s
˚C
˚C
1. Neglecting switching and reverse current losses.
September 1998
1
Rev 1.100

BY329F Related Products

BY329F BY329 BY329F-1000 BY329F-800 BY329X-1000 BY329F-1200
Description Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:5mA; Current, It av:6A; Gate Trigger Current Max, Igt:5mA RoHS Compliant: Yes
Is it Rohs certified? - - incompatible incompatible incompatible incompatible
Maker - - Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code - - unknow unknow unknow unknow
Configuration - - SINGLE SINGLE SINGLE SINGLE
Diode type - - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) - - 1.85 V 1.85 V 1.85 V 1.85 V
JESD-609 code - - e0 e0 e0 e0
Maximum non-repetitive peak forward current - - 65 A 65 A 65 A 65 A
Number of components - - 1 1 1 1
Maximum operating temperature - - 150 °C 150 °C 150 °C 150 °C
Maximum output current - - 8 A 8 A 8 A 8 A
Maximum repetitive peak reverse voltage - - 1000 V 800 V 1000 V 1200 V
surface mount - - NO NO NO NO
Terminal surface - - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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