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MUR2025

Description
20 A, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerJinan Jing Heng Electronics
Websitehttp://www.jinghenggroup.com/
Download Datasheet View All

MUR2025 Overview

20 A, SILICON, RECTIFIER DIODE, TO-220AC

R
MURF2020 THRU MURF2060
GLASS PASSIVATED SUPER FAST RECTIFIER
Reverse Voltage - 200 -600 Volts
Forward Current - 20.0Amperes
S E M I C O N D U C T O R
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Fast switching for high efficiency
Low forward voltage drop
Fred chip Planer construction
High surge capability
High temperature soldering guaranteed:260
°
C/10 seconds,
JF
0.25"(6.35mm)from case
MURF2060
Component in accordance to RoHS 2011
/
65
/
EU
0.177(4.50)
0.138(3.50)
0.410(10.42)
ITO-220AC
0.140(3.55)
0.128(3.25)
DIA
0.111(2.83)
0.101(2.57)
0.187(4.75)
0.167(4.25)
0.130(3.31)
0.388(9.85)
0.110(2.81)
0.272(6.90)
0.256(6.50)
1
PIN
2
1.161(29.50)
1.083(27.50)
0.551(14.00)
0.136(3.45)
0.102(2.60)
0.056(1.43)
0.043(1.10)
0.496(12.60)
0.029(0.73)
0.019(0.47)
MECHANICAL DATA
Case: JEDEC ITO-220AC molded plastic body
Terminals: Lead solderable per MIL-STD-750,method 2026
Polarity: As marked.
Mounting Position: Any
0.208(5.28)
0.192(4.88)
0.029(0.73)
0.019(0.47)
Dimensions inches and (millimeters)
Dimensions in in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
°
C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current(see Fig.1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage
at 20.0 A per leg(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T
A
=25
°
C
T
A
=125
°
C
MURF
2020
200
140
200
MURF
2040
400
280
400
20.0
150.0
150
MURF
2060
600
420
600
Units
V
olts
V
olts
V
olts
A
mps
A
mps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
R
θJC
T
J
T
STG
1
.
0
1.3
10
250
1.5
V
olts
μA
Maximum Reverse Recovery Time (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
35
2.5
-55 to+150
-55 to+150
50
ns
°C/W
°C
°C
Notes:
1. Pulse test: 300
μ
s pulse width,1% duty cycle
2. Reverse recovery test conditions I
F
=0.5A,I
R
=1.0A, Irr=0.25A
3. Thermal resistance from junction to case
JINAN JINGHENG ELECTRONICS CO., LTD.
2
-
1
HTTP
://
WWW.JINGHENGGROUP.COM
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