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2SC5172

Description
High Collector Breakdown Voltage: VCEO =400V
File Size179KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SC5172 Overview

High Collector Breakdown Voltage: VCEO =400V

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC5172
DESCRIPTION
·High
Collector Breakdown Voltage
:
V
CEO
=400V
APPLICATIONS
·Switching
regulator and high voltage
switching applications
·High
speed DC-DC converter applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
c
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
600
400
7
5
2
25
150
-55~150
UNIT
V
V
V
A
A
W
isc Website:www.iscsemi.cn
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