SGA2263ZPCK1 datasheet, PDF - EEWORLD Datasheet

SGA2263Z

DC to 5000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-363

Product Description

The SGA2263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington con-

figuration featuring one-micron emitters provides high F

T

and excellent thermal per-

formance. The heterojunction increases breakdown voltage and minimizes leakage

current between junctions. Cancellation of emitter junction non-linearities results in

higher suppression of intermodulation products. Only two DC-blocking capacitors, a

bias resistor, and an optional RF choke are required for operation.

Features



High Gain: 13.8dB at

1950MHz

Cascadable 50

Operates from Single Supply

Low Thermal Resistance

Package

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

Gain (dB)

24

18

12

6

Applications

Gain & Return Loss vs. Freq. @T

L

=+25°C

0

-10

-20

-30

ORL

0

1

2

3

Frequency (GHz)

4

5

-40



SiGe BiCMOS

Si BiCMOS

GAIN

IRL

Return Loss (dB)

InGaP HBT





SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Parameter

Small Signal Gain

Min.

13

Specification

Typ.

14.7

13.5

13.2

7.5

6.1

20.2

18.0

5000

Max.

16.2

Unit

dB

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Condition

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

17.6

dB

1950MHz

Output Return Loss

25.3

dB

1950MHz

Noise Figure

3.5

dB

1950MHz

Device Operating Voltage

1.9

2.2

2.5

V

Device Operating Current

17

20

23

mA

Thermal Resistance

255

°C/W

junction - lead

Test Conditions: V

S

=5V, I

D

=20mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-10dBm, R

BIAS

=140, T

L

=25°C, Z

S

=Z

L

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS140509

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGA2263Z

Absolute Maximum Ratings

Parameter

Max Device Current (I

D

)

Max Device Voltage (V

D

)

Max RF Input Power

Max Junction Temp (T

J

)

Operating Temp Range (T

L

)

Max Storage Temp

Rating

40

4

+18

+150

-55 to +110

+150

Unit

mA

V

dBm

°C

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l

Typical Performance at Key Operating Frequencies

Parameter

Unit

100MHz

500MHz

850MHz

1950MHz 2400MHz 3500MHz

Small Signal Gain

dB

14.9

14.7

13.5

13.2

Output Third Order Intercept Point

dBm

20.4

20.2

18.0

16.9

Output Power at 1dB Compression

dBm

7.6

7.5

6.1

5.4

Input Return Loss

dB

21.3

21.5

19.6

17.6

17.2

Output Return Loss

dB

24.1

23.0

27.8

25.3

23.4

Reverse Isolation

dB

17.8

18.5

18.7

19.1

19.2

Noise Figure

dB

3.3

3.2

3.5

4.0

Test Conditions: V

S

=5V, I

D

=20mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=-10dBm, R

BIAS

=140, T

L

=25°C, Z

S

=Z

L

=50

15.0

26.7

19.2

OIP

3

vs. Frequency

V

D

= 2.2 V, I

D

= 20 mA

30

25

OIP

3

(dBm)

P

1dB

vs. Frequency

V

D

= 2.2 V, I

D

= 20 mA

10

8

P

1dB

(dBm)

6

4

2

0

T

L

=+25ºC

20

15

T

L

=+25ºC

10

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

Noise Figure vs. Frequency

V

D

= 2.2 V, I

D

= 20 mA

5

Noise Figure (dB)

4

3

2

1

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

T

L

=+25ºC

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS140509

SGA2263Z

Typical RF Performance Over Temperature (Bias: V

D

=2.2V, I

D

=20mA (Typ.))

24

18

S

21

(dB)

12

6

S

11

(dB)

|

S

|

vs. Frequency

21

0

-10

-20

-30

|

S

|

vs. Frequency

11

T

L

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

T

L

-40

5

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

5

-10

-15

S

12

(dB)

-20

-25

|

S

|

vs. Frequency

12

0

-10

S

22

(dB)

-20

-30

|

S

|

vs. Frequency

22

T

L

-30

0

1

2

3

Frequency (GHz)

4

+25°C

-40°C

+85°C

T

L

-40

5

+25°C

-40°C

+85°C

0

1

2

3

Frequency (GHz)

4

5

DS140509

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGA2263Z

Application Circuit

V

S

R

BIAS

1 uF

1000

pF

Reference

Designator

Frequency (Mhz)

500

850

1950

2400

3500

C

D

L

C

B

C

D

L

C

220 pF

100 pF

68 nH

100 pF

68 pF

33 nH

68 pF

22 pF

22 nH

56 pF

22 pF

18 nH

39 pF

15 pF

15 nH

RF in

C

B

3

SGA2263Z

6

4,5

C

B

1,2

RF out

Recommended Bias Resistor Values for I

D

=20mA

R

BIAS

=( V

S

-V

D

) / I

D

Supply Voltage(V

S

)

R

BIAS

5V

140

6V

200

8V

300

10 V

390

V

S

R

BIAS

Note: R

BIAS

provides DC bias stability over temperature.

1 uF

1000 pF

Mounting Instructions

1. Use a large ground pad area near device pins 1, 2,

4, and 5 with many plated through-holes as shown.

L

C

A22

C

D

C

B

C

B

3. We recommend 1 or 2 ounce copper. Measurements

for this data sheet were made on a 31 mil thick FR-4

board with 1 ounce copper on both sides.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS140509

SGA2263Z

SOT-363 PCB Pad Layout

Dimensions in inches [millimeters]

SOT-363 PCB Pad

Preliminary

Layout

RF

OUT

RF

IN

Notes:

1. Provide a large ground pad area under device

pins 1, 2, 4, & 5 with many plated via holes as

shown.

2. Dimensions given for 50 Ohm RF I/O lines are for

31 mil thick Getek. Scale accordingly for different

board thicknesses and dielectric contants.

3. We recommend 1 or 2 ounce copper. Measure-

ments for this data sheet were made on a 31 mil

thick Getek with 1 ounce copper on both sides.

SOT-363 Nominal Package Dimensions

DS140509

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

Parameter Name	Attribute value
Maximum input power	18 dBm
Number of terminals	6
Minimum operating frequency	0.0 MHz
Maximum operating frequency	5000 MHz
Minimum operating temperature	-40 Cel
Maximum operating temperature	85 Cel
Processing package description	GREEN, SOT-363, 6 PIN
state	Active
Microwave RF Type	WIDE BAND LOW POWER
Impedance characteristics	50 ohm
structure	COMPONENT
Gain	13.2 dB
Number of functions	1
Packaging Materials	PLASTIC/EPOXY
ckage_equivalence_code	TSSOP6,.08
wer_supplies__v_	2.2
sub_category	RF/Microwave Amplifiers
Maximum supply voltage	23 mA
Craftsmanship	BIPOLAR

	SGA2263ZPCK1	SGA2263ZSR	SGA2263Z	SGA2263ZSQ
Description	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum input power	18 dBm	18 dBm	18 dBm	18 dBm
Number of terminals	6	6	6	6
Minimum operating frequency	0.0 MHz	0.0 MHz	0.0 MHz	0.0 MHz
Maximum operating frequency	5000 MHz	5000 MHz	5000 MHz	5000 MHz
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum operating temperature	85 Cel	85 Cel	85 Cel	85 Cel
Processing package description	GREEN, SOT-363, 6 PIN	GREEN, SOT-363, 6 PIN	GREEN, SOT-363, 6 PIN	GREEN, SOT-363, 6 PIN
state	Active	Active	Active	Active
Microwave RF Type	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER
Impedance characteristics	50 ohm	50 ohm	50 ohm	50 ohm
structure	COMPONENT	COMPONENT	COMPONENT	COMPONENT
Gain	13.2 dB	13.2 dB	13.2 dB	13.2 dB
Number of functions	1	1	1	1
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
ckage_equivalence_code	TSSOP6,.08	TSSOP6,.08	TSSOP6,.08	TSSOP6,.08
wer_supplies__v_	2.2	2.2	2.2	2.2
sub_category	RF/Microwave Amplifiers	RF/Microwave Amplifiers	RF/Microwave Amplifiers	RF/Microwave Amplifiers
Maximum supply voltage	23 mA	23 mA	23 mA	23 mA
Craftsmanship	BIPOLAR	BIPOLAR	BIPOLAR	BIPOLAR

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