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B20V140

Description
SILICON MICROWAVE POWER TRANSISTOR
File Size21KB,2 Pages
ManufacturerETC2
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B20V140 Overview

SILICON MICROWAVE POWER TRANSISTOR

BIPOLARICS, INC.
Part Number B20V140
SILICON MICROWAVE POWER TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
DESCRIPTION AND APPLICATIONS:
High Output Power
27.0 dBm, P
1dB
@ 1.0 GHz
High Gain Bandwidth Product
f = 6.0 GHz @ I
C
= 100 mA
t
Bipolarics' B20V140 is a high performance, low cost silicon bipolar
transistor intended for linear power applications at frequencies of 0.5 to
2.6 GHz. Uniformity and reliability are assured by the use of advanced
process techniques: ion implanted junctions, ion implanted ballast
resistors and gold metallization. When the B20V140 is bonded common
emitter, linear output power of 1 Watt can be achieved. By driving part
type B20V180 or B20V1160 combination thereof, higher output power
can be achieved.
High Gain
G
PE
= 14.0 dB @ 1.0 GHz
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
Ceramic, BeO & Stripline
available
packages
V
CBO
V
CEO
V
EBO
I
C
T
J
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (instantaneous)
Junction Temperature
Storage Temperature
40
20
3.0
160
200
-65 to +150
V
V
V
mA
o
PERFORMANCE DATA:
Electrical Characteristics (T
A
= 25
o
C)
C
C
T
STG
o
SYMBOL
PARAMETERS & CONDITIONS
V
CE
=15V, I
C
= 100 mA, Class A, unless stated
UNIT
MIN.
TYP.
MAX.
P
1dB
G
1dB
Power output at 1 dB compression:
f = 1.0 GHz
dBm
27.0
Gain at 1dB compression:
f = 1.0 GHz
dB
9.0
η
C
CB
Collector Efficiency
Class A
%
30
Collector Base Capacitance:
f = 1 MHz, I
E
= 0
pF
0.7
1.0
h
FE
P
T
Forward Current Transfer Ratio: V
CE
= 8V, I
C
=50 mA
Total Power Dissipation
W
20
60
100
1.5

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