2SK168
Silicon N-Channel Junction FET
Application
VHF Amplifier, Mixer, Local oscillator
Outline
TO-92 (2)
1. Gate
2. Source
3. Drain
3
2
1
2SK168
Absolute Maximum Ratings
(Ta = 25°C)
Item
Gate to drain voltage
Gate to source voltage
Gate current
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
GDO
V
GSS
I
G
I
D
Pch
Tch
Tstg
Ratings
–30
–1
10
20
200
150
–55 to +150
Unit
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Gate to drain breakdown
voltage
Gate cutoff current
Drain current
Gate to source cutoff voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Note:
D
4 to 8
Symbol
V
(BR)GDO
I
GSS
I
DSS
*
1
V
GS(off)
|y
fs
|
Ciss
Crss
PG
NF
Min
–30
—
4
—
8
—
—
—
—
Typ
—
—
—
—
10
6.8
0.1
27
1.7
Max
—
–10
20
–3.0
—
—
—
—
—
Unit
V
nA
mA
V
mS
pF
pF
dB
dB
Test conditions
I
G
= –100
µA,
I
S
= 0
V
GS
= –0.5 V, V
DS
= 0
V
DS
= 5 V, V
GS
= 0
V
DS
= 5 V, I
D
= 10
µA
V
DS
= 5 V, V
GS
= 0, f = 1 kHz
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
V
DS
= 5 V, V
GS
= 0, f = 1 MHz
V
DS
= 5 V, V
GS
= 0,
f = 100 MHz
V
DS
= 5 V, V
GS
= 0,
f = 100 MHz
1. The 2SK168 is grouped by I
DSS
as follows.
E
6 to 12
F
10 to 20
2
2SK168
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation Pch (mW)
300
Typical Output Characteristics (1)
10
V
GS
= 0
Drain Current I
D
(mA)
8
–0.2 V
6
–0.4
4
–0.6
2
–0.8
–1.0
0
30
40
10
20
Drain to Source Voltage V
DS
(V)
50
Pc
h
=
200
20
0
m
W
100
0
100
150
50
Ambient Temperature Ta (°C)
Typical Output Characteristics (2)
10
V
GS
= 0
Drain Current I
D
(mA)
Drain Current I
D
(mA)
8
–0.2 V
6
–0.4
4
–0.6
2
–0.8
–1.0
3
4
1
2
Drain to Source Voltage V
DS
(V)
5
15
Typical Transfer Characteristics
V
DS
= 5 V
10
F
5
E
D
0
–3.0
0
–2.0
–1.0
Gate to Source Voltage V
GS
(V)
0
3
2SK168
Forward Transfer Admittance vs.
Drain to Source Voltage
Forward Transfer Admittance
y
fs
(mS)
15
Forward Transfer Admittance
y
fs
(mS)
Ta = –25°C
25°C
10
75°C
50
20
10
5
2
1.0
0.5
0.2
V
DS
= 5 V
f = 1 kHz
Forward Transfer Admittance vs.
Drain Current
5
V
GS
= 0
f = 1 kHz
0
10
5
Drain to Source Voltage V
DS
(V)
15
5
10
0.5 1.0
2
Drain Current I
D
(mA)
20
20
Input Capacitance C
iss
(pF)
V
GS
= 0
f = 1 MHz
10
Reverse Transfer Capacitance C
rss
(pF)
Input Capacitance vs.
Drain to Source Voltage
Reverse Transfer Capacitance vs.
Drain to Source Voltage
5
V
GS
= 0
f = 1 MHz
2
1.0
0.5
5
0.2
0.1
0.05
0.1
2
0.1
2
5
10
0.2
0.5 1.0
Drain to Source Voltage V
DS
(V)
5
2
0.2
0.5 1.0
Drain to Source Voltage V
DS
(V)
10
4
2SK168
Output Capacitance vs.
Drain to Source Voltage
200
Output Capacitance C
oss
(pF)
100
50
V
GS
= 0
f = 1 MHz
Power Gain PG (dB)
20
V
GS
= 0
f = 100 MHz
10
30
Power Gain vs.
Drain to Source Voltage
20
10
5
2
0.1
0.2
0.5 1.0
2
5
Drain to Source Voltage V
DS
(V)
10
0
10
5
Drain to Source Voltage V
DS
(V)
15
Power Gain vs. Drain Current
30
E
Power Gain PG (dB)
D
20
F
Noise Figure NF (dB)
6
8
Noise Figure vs.
Drain to Source Voltage
V
GS
= 0
f = 100 MHz
4
10
V
DS
= 5 V
f = 100 MHz
V
GS
Variable
2
0
2
4
6
8
10 12 14
Drain Current I
D
(mA)
16
0
4
8
12
Drain to Source Voltage V
DS
(V)
16
5
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