VS-30CTH03PbF
Vishay Semiconductors
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
Base
common
cathode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Compliant to RoHS Directive 2002/95/EC
Anode
3
TO-220AB
Anode
1
2
Common
cathode
• AEC-Q101 qualified
DESCRIPTION/APPLICATIONS
300 V series are the state of the art hyperfast recovery
rectifiers designed with optimized performance of forward
voltage drop and hyperfast recovery time.
TO-220AB
2 x 15 A
300 V
1.25 V
See Recovery table
175 °C
Common cathode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well
as freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
per diode
per device
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 153 °C
T
C
= 25 °C
TEST CONDITIONS
VALUES
300
15
30
150
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 300 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
300
-
-
-
-
-
-
TYP.
-
1.0
0.85
-
8
38
8
MAX.
-
1.25
0.95
40
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94016
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CTH03PbF
Vishay Semiconductors
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
33
48
2.8
6.5
46
160
MAX.
36
30
ns
-
-
-
A
-
-
nC
-
UNITS
Reverse recovery charge
Q
rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case per diode
Marking device
SYMBOL
T
J
, T
Stg
R
thJC
MIN.
- 65
-
TYP.
-
-
MAX.
175
1.4
30CTH03
UNITS
°C
°C/W
Case style TO-220AB
For technical questions within your region, please contact one of the following:
Document Number: 94016
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
2
VS-30CTH03PbF
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
Vishay Semiconductors
100
100
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
T
J
= 150 °C
10
T
J
= 125 °C
1
T
J
= 100 °C
T
J
= 75 °C
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.4
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
50
100
150
200
250
300
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
50
100
150
200
250
300
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
.
10
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94016
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30CTH03PbF
Vishay Semiconductors
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
180
100
I
F
= 15 A
170
DC
160
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
140
0
5
10
15
20
25
10
100
T
J
= 125 °C
Allowable Case Temperature (°C)
t
rr
(ns)
T
J
= 25 °C
150
V
R
= 200 V
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
20
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
1000
I
F
= 15 A
Average Power Loss (W)
16
RMS limit
T
J
= 125 °C
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(nC)
12
100
T
J
= 25 °C
8
4
DC
V
R
= 200 V
10
15
20
25
10
100
1000
0
0
5
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
For technical questions within your region, please contact one of the following:
Document Number: 94016
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
www.vishay.com
4
VS-30CTH03PbF
Hyperfast Rectifier, 2 x 15 A FRED Pt
®
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94016
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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