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S10K

Description
10 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size370KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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S10K Overview

10 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB

MCC
Features
l
l
l
l
l
  omponents
21201 Itasca Street Chatsworth

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S10A
THRU
S10M
10.0 Amp Standard
Recovery Rectifier
50 to 1000 Volts
DO-214AB
(SMCJ) (Round Lead)
H
High Current Capability
Extremely Low Thermal Resistance
For Surface Mount Application
Higher Temp Soldering: 250 C for 10 Seconds At Terminals
Available on Tape and Reel
o
Maximum Ratings
l
l
Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
o
o
o
o
MCC
Catalog
Number
S10A
S10B
S10D
S10G
S10J
S10K
S10M
Device
Marking
S10A
S10B
S10D
S10G
S10J
S10K
S10M
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Cathode Band
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
J
A
C
E
F
G
D
B
DIMENSIONS
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Average Forward
Current
Peak Forward
Surge Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
F(AV)
I
FSM
V
F
10.0A
200A
1.20V
T
J
=75
o
C
8.3ms half
sine
I
FM
=10.0A
T
A
=25
o
C
DIM
A
B
C
D
E
F
G
H
J
INCHES
MIN
.200
.177
.002
---
.053
.168
.320
.239
.234
MAX
.214
.203
.005
.02
.067
.179
.330
.243
.240
MM
MIN
5.08
4.70
.05
---
1.35
4.27
8.13
6.08
5.95
MAX
5.43
5.30
.13
.51
1.70
4.55
8.38
6.18
6.10
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.190
I
R
10.0uA
T
A
=25
o
C
0.200”
*Pulse test: Pulse width 200 usec, Duty cycle 2%
0.070”
www.mccsemi.com

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Description 10 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB 10 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB 10 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 10 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AB 10 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 10 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB
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