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BY399

Description
3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size30KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
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BY399 Overview

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD

BY399 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionO-PALF-W2
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY, LOW LEAKAGE CURRENT
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage800 V
Maximum reverse current10 µA
Maximum reverse recovery time0.25 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BY396 - BY399
PRV : 100 - 800 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
FAST RECOVERY
RECTIFIER DIODES
DO-201AD
0.21 (5.33)
0.19 (4.82)
1.00 (25.4)
MIN.
0.375 (9.52)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.21 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherw ise specified.
Single phase, half w ave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 3.0 Amps.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°
C
Ta = 100
°
C
Ta = 55
°
C
SYMBOL
V
RRM
V
RMS
V
DC
BY396
100
70
100
BY397
200
140
200
BY398
400
280
400
BY399
800
560
800
UNIT
Volts
Volts
Volts
I
F(AV)
3.0
Amps.
I
FSM
V
F
I
R
I
R(H)
Trr
100
1.25
10
100
250
60
- 65 to + 150
- 65 to + 150
Amps.
Volts
µ
A
µ
A
ns
pf
°
C
°
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
UPDATE : APRIL 23, 1998

BY399 Related Products

BY399 BY396 BY397 BY398
Description 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
Is it Rohs certified? conform to conform to conform to conform to
Reach Compliance Code compliant compli compli compliant
Other features HIGH RELIABILITY, LOW LEAKAGE CURRENT HIGH RELIABILITY, LOW LEAKAGE CURRENT HIGH RELIABILITY, LOW LEAKAGE CURRENT HIGH RELIABILITY, LOW LEAKAGE CURRENT
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.25 V 1.25 V 1.25 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 100 A 100 A 100 A 100 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 800 V 100 V 200 V 400 V
Maximum reverse current 10 µA 10 µA 10 µA 10 µA
Maximum reverse recovery time 0.25 µs 0.25 µs 0.25 µs 0.25 µs
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors]
Base Number Matches 1 - 1 1

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