5962-8958102PX datasheet, PDF - EEWORLD Datasheet

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5962-8958102PX: DescriptionThree Terminal Voltage Reference, 1 Output, 10V, Trim/Adjustable, BIPolar, CDIP8, GLASS SEALED, CERDIP-8; CategoryPower/power management The power supply circuit; File Size61KB，15 Pages; ManufacturerADI; Websitehttps://www.analog.com

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5962-8958102PX Overview

Three Terminal Voltage Reference, 1 Output, 10V, Trim/Adjustable, BIPolar, CDIP8, GLASS SEALED, CERDIP-8

5962-8958102PX Parametric

Parameter Name	Attribute value
Objectid	1547532931
package instruction	GLASS SEALED, CERDIP-8
Reach Compliance Code	unknown
Analog Integrated Circuits - Other Types	THREE TERMINAL VOLTAGE REFERENCE
JESD-30 code	R-GDIP-T8
JESD-609 code	e0
Number of functions	1
Output times	1
Number of terminals	8
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output voltage	10.05 V
Minimum output voltage	9.95 V
Nominal output voltage	10 V
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	33 V
Minimum supply voltage (Vsup)	13 V
surface mount	NO
technology	BIPOLAR
Maximum voltage temperature coefficient	25 ppm/°C
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Fine-tuning/adjustable output	YES
width	7.62 mm

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REVISIONS

LTR

DESCRIPTION

Added one vendor, CAGE 1ES66. Made change to table I and figure 1.

Editorial changes throughout.

DATE (YR-MO-DA)

91-10-29

APPROVED

M. A. FRYE

Add device class V and radiation hardness requirements. Make change to

footnote six as specified in table I. Make change to groups C and D endpoints

as specified in table IIA and add table IIB. Delete CAGE 07933. Replace

CAGE 06665 with CAGE 24355. - ro

00-05-31

R. MONNIN

Add device types 03 and 04. Make changes to 1.2.2 and to output voltage

noise test as specified in table I. - ro

01-02-06

R. MONNIN

Add case outline H. - ro

02-04-15

R. MONNIN

THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

RICK C. OFFICER

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

CHARLES E. BESORE

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

http://www.dscc.dla.mil

APPROVED BY

MICHAEL A. FRYE

MICROCIRCUIT, LINEAR, POSITIVE 10-VOLT

ADJUSTABLE PRECISION VOLTAGE

REFERENCE, MONOLITHIC SILICON

DRAWING APPROVAL DATE

89-07-17

AMSC N/A

REVISION LEVEL

SIZE

SHEET

CAGE CODE

67268

1 OF

5962-89581

DSCC FORM 2233

APR 97

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

5962-E305-02

1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as listed

below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q

designators will not be included in the PIN and will not be marked on the device.

Device class

Device requirements documentation

Vendor self-certification to the requirements for MIL-STD-883 compliant,

non-JAN class level B microcircuits in accordance with MIL-PRF-38535,

appendix A

Certification and qualification to MIL-PRF-38535

Q or V

1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter

Descriptive designator

MACY1-X8

GDFP1-F10 or CDFP2-F10

GDIP1-T8 or CDIP2-T8

CQCC1-N20

Terminals

Package style

Can

Flat pack

Dual-in-line

Square leadless chip carrier

1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,

appendix A for device class M.

1.3 Absolute maximum ratings. 1/

Input voltage (V

) .......................................................................................... 40 V dc

Power dissipation (P

) ...................................................................................

Output short circuit duration ...........................................................................

Storage temperature range ............................................................................

Lead temperature (soldering, 10 seconds) .....................................................

Junction temperature (T

) ...............................................................................

500 mW 2/

Indefinite

-65°C to +150°C

+300°C

+150°C

Thermal resistance, junction-to-case (θ

) .................................................... See MIL-STD-1835

1.4 Recommended operating conditions.

Ambient operating temperature range (T

) .................................................... -55°C to +125°C

1.5 Radiation features. 3/

Maximum total dose available (dose rate = 50 – 300 rads(Si)/s) ................... 100 Krads

______

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Derate above +80°C, 7.1 mW/°C for case outline G. Derate above +75°C, 6.6 mW/°C for case outline P.

Derate above +72°C, 7.8 mW/°C for case outline 2. Derate above +85°C, 5.6 mW/°C for case outline H.

3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects.

Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883,

method 1019, condition A.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-89581

SHEET

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in

the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the

solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883 -

MIL-STD-1835 -

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2.

3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and post irradiation parameter limits are as specified in table I and shall apply over the

full ambient operating temperature range.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-89581

SHEET

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