PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 02 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
I
I
I
I
Bidirectional ESD protection of one line
Max. peak pulse power: P
pp
= 500 W
Low clamping voltage: V
(CL)R
= 26 V
Ultra low leakage current: I
RM
< 0.09
µA
I
I
I
I
ESD protection > 23 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); I
pp
= 18 A
Very small SMD plastic package
1.3 Applications
I
Computers and peripherals
I
Communication systems
I
Audio and video equipment
I
Data lines
I
CAN bus protection
1.4 Quick reference data
Table 1.
Symbol
V
RWM
Quick reference data
Parameter
reverse stand-off voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
C
d
diode capacitance
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
V
R
= 0 V;
f = 1 MHz
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
3.3
5.0
12
15
24
V
V
V
V
V
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode 1
cathode 2
1
2
1
sym045
Simplified outline
Symbol
2
3. Ordering information
Table 3.
Ordering information
Package
Name
PESDxL1BA series SC-76
Description
plastic surface mounted package; 2 leads
Version
SOD323
Type number
4. Marking
Table 4.
Marking codes
Marking code
AB
AC
AD
AE
AF
Type number
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
2 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
pp
Parameter
peak pulse power
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
I
pp
peak pulse current
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
T
j
T
amb
T
stg
[1]
Conditions
8/20
µs
[1]
Min
-
-
-
-
-
Max
500
500
200
200
200
18
15
5
5
3
150
+150
+150
Unit
W
W
W
W
W
A
A
A
A
A
°C
°C
°C
8/20
µs
[1]
-
-
-
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Non-repetitive current pulse 8/20
µs
exponential decay waveform; see
Figure 1.
Table 6.
Symbol
ESD
ESD maximum ratings
Parameter
electrostatic discharge capability
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
PESDxL1BA series
HBM MIL-Std 883
Conditions
IEC 61000-4-2
(contact discharge)
[1]
Min
Max
Unit
-
-
-
-
-
-
30
30
30
30
23
10
kV
kV
kV
kV
kV
kV
[1]
Device stressed with ten non-repetitive ESD pulses; see
Figure 2.
Table 7.
Standard
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD);
Figure 2
HBM MIL-Std 883; class 3
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
3 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
001aaa631
120
I
PP
(%)
80
100 % I
PP
; 8
µs
001aaa630
I
PP
100 %
90 %
e
−t
50 % I
PP
; 20
µs
40
10 %
t
r
=
0.7 ns to 1 ns
0
10
20
30
t (µs)
40
30 ns
60 ns
t
0
Fig 1.
8/20
µs
pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
4 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
V
RWM
Parameter
reverse stand-off voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
I
RM
reverse leakage current
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
V
(BR)
breakdown voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
C
d
diode capacitance
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
V
(CL)R
clamping voltage
PESD3V3L1BA
PESD5V0L1BA
PESD12VL1BA
PESD15VL1BA
PESD24VL1BA
I
pp
= 1 A
I
pp
= 18 A
I
pp
= 1 A
I
pp
= 15 A
I
pp
= 1 A
I
pp
= 5A
I
pp
= 1 A
I
pp
= 5 A
I
pp
= 1 A
I
pp
= 3 A
[1]
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
0.09
0.01
<1
<1
<1
6.4
7.6
15.9
18.9
27.8
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
Unit
V
V
V
V
V
µA
µA
nA
nA
nA
V
V
V
V
V
see
Figure 7
V
RWM
= 3.3 V
V
RWM
= 5.0 V
V
RWM
= 12 V
V
RWM
= 15 V
V
RWM
= 24 V
I
R
= 5 mA
5.8
7.0
14.2
17.1
25.4
V
R
= 0 V; f = 1 MHz;
see
Figure 5
and
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
101
75
19
16
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
26
10
33
20
37
25
44
40
70
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
-
-
-
-
-
PESDXL1BA_SER_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
5 of 15
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