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PSMN4R0-30YLDX

Description
mosfet mosfet N-CH 30v lfpak
Categorysemiconductor    Discrete semiconductor   
File Size359KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

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PSMN4R0-30YLDX Overview

mosfet mosfet N-CH 30v lfpak

PSMN4R0-30YLDX Parametric

Parameter NameAttribute value
ManufactureNXP
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Curre95 A
Rds On - Drain-Source Resistance4 mOhms
ConfiguratiSingle Triple Source
Vgs th - Gate-Source Threshold Voltage1.74 V
Qg - Gate Charge9.1 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipati64 W
Mounting StyleSMD/SMT
Package / CaseLFPAK56-4
PackagingReel
Channel ModeEnhanceme
Fall Time11.7 ns
Minimum Operating Temperature- 55 C
Rise Time21.2 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time14.9 ns
LF
PSMN4R0-30YLD
10 October 2013
PA
K
56
N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56
using NextPowerS3 Technology
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
high efficiency, low spiking performance usually associated with MOSFETs with an
integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching
frequencies.
2. Features and benefits
Ultra low Q
G
, Q
GD
and Q
OSS
for high system efficiency, especially at higher switching
frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at
25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no
wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection
3. Applications
On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
25 °C ≤ T
j
≤ 175 °C
T
mb
= 25 °C; V
GS
= 10 V;
Fig. 1
T
mb
= 25 °C;
Fig. 2
Min
-
-
-
Typ
-
-
-
Max
30
95
64
Unit
V
A
W
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