DISCRETE SEMICONDUCTORS
DATA SHEET
M3D076
BLF544
UHF power MOS transistor
Product specification
Supersedes data of October 1992
1998 Jan 21
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Good thermal stability
•
Gold metallization ensures excellent reliability
•
Designed for broadband operation.
APPLICATIONS
•
Communication transmitters in the UHF frequency
range.
handbook, halfpage
BLF544
PINNING - SOT171A
PIN
1
2
3
4
5
6
SYMBOL
s
s
g
d
s
s
source
source
gate
drain
source
source
DESCRIPTION
2
4
6
d
DESCRIPTION
N-channel enhancement mode vertical D-MOS power
transistor encapsulated in a 6-lead, SOT171A flange
package with a ceramic cap. All leads are isolated from the
flange.
A marking code showing gate-source voltage (V
GS
)
information is provided for matched pair applications.
g
1
Top view
3
5
MAM390
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source class-B circuit.
MODE OF OPERATION
CW, class-B
CW, class-B
f
(MHz)
500
960
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
V
DS
(V)
28
28
P
L
(W)
20
20
G
p
(dB)
>11
typ. 7
η
D
(%)
>50
typ. 50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1998 Jan 21
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF544
MAX.
65
±20
3.5
48
150
200
UNIT
V
V
A
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
VALUE
3.7
0.4
UNIT
K/W
K/W
handbook, halfpage
10
MRA992
handbook, halfpage
60
MBK442
ID
(A)
(1)
(2)
Ptot
(W)
(1)
40
1
(2)
20
10
−1
1
10
VDS (V)
10
2
0
0
40
80
120
Th (
°C)
160
(1) Current is this area may be limited by R
DSon.
(2) T
mb
= 25
°C.
(1) Short-time operation during mismatch.
(2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
1998 Jan 21
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GSth
∆V
GSth
g
fs
R
DSon
I
DSX
C
is
C
os
C
rs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 10 mA
V
GS
= 0; V
DS
= 28 V
V
GS
=
±20
V; V
DS
= 0
I
D
= 40 mA; V
DS
= 10 V
I
D
= 40 mA; V
DS
= 10 V
I
D
= 1.2 A; V
DS
= 10 V
I
D
= 1.2 A; V
GS
= 10 V
V
GS
= 15 V; V
DS
= 10 V
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
V
GS
= 0; V
DS
= 28 V; f = 1 MHz
MIN.
65
−
−
1
−
600
−
−
−
−
−
TYP.
−
−
−
−
−
900
0.85
4.8
32
24
6.4
BLF544
MAX. UNIT
−
1
1
4
100
−
1.25
−
−
−
−
V
mA
µA
V
mV
mS
Ω
A
pF
pF
pF
handbook, halfpage
4
MDA504
handbook, halfpage
6
MDA505
T.C
(mV/K)
2
ID
(A)
4
0
2
−2
−4
10
−2
10
−1
0
1
ID (A)
10
0
5
10
15
VGS (V)
20
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Fig.5
Drain current as a function of gate-source
voltage; typical values.
1998 Jan 21
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF544
handbook, halfpage
2
MDA506
handbook, halfpage
RDSon
(Ω)
1.6
100
C
(pF)
80
MDA507
1.2
60
0.8
40
Cis
Cos
0.4
20
0
0
50
100
Tj (°C)
150
0
0
10
20
VDS (V)
30
I
D
= 1.2 A; V
GS
= 10 V.
V
GS
= 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a
function of junction temperature; typical
values.
Fig.7
Input and output capacitance as functions
of drain-source voltage; typical values.
handbook, halfpage
40
MDA508
Crs
(pF)
30
20
10
0
0
10
20
VDS (V)
30
V
GS
= 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jan 21
5
京公网安备 11010802033920号
EEWORLD
