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BSC060P03NS3E G

Description
mosfet P-channel -30v mosfet
Categorysemiconductor    Discrete semiconductor   
File Size537KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSC060P03NS3E G Overview

mosfet P-channel -30v mosfet

BSC060P03NS3E G Parametric

Parameter NameAttribute value
ManufactureInfine
Product CategoryMOSFET
RoHSYes
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 30 V
Vgs - Gate-Source Breakdown Voltage25 V
Id - Continuous Drain Curre- 100 A
Rds On - Drain-Source Resistance6 mOhms
ConfiguratiSingle Quad Drain Triple Source
Qg - Gate Charge61 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati83 W
Mounting StyleSMD/SMT
Package / CaseTDSON-8
PackagingReel
Fall Time34 nS
Minimum Operating Temperature- 55 C
Rise Time139 nS
Factory Pack Quantity5000
Typical Turn-Off Delay Time66 nS
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