BSC077N12NS3G
MOSFET
OptiMOS
TM
3Power-Transistor,120V
Features
•N-channel,normallevel
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Value
120
7.7
98
Unit
V
mΩ
A
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC077N12NS3 G
Package
PG-TDSON-8
Marking
077N12NS
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.8,2015-12-15
OptiMOS
TM
3Power-Transistor,120V
BSC077N12NS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.8,2015-12-15
OptiMOS
TM
3Power-Transistor,120V
BSC077N12NS3G
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-55
Typ.
-
-
-
-
-
-
-
-
Max.
98
61
13.4
392
330
20
139
150
Unit
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
A
=25°C,R
thJA
=45K/W
1)
T
C
=25°C
I
D
=50A,R
GS
=25Ω
-
T
C
=25°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case,
bottom
Thermal resistance, junction - case,
top
Symbol
R
thJC
R
thJC
Values
Min.
-
-
-
-
Typ.
0.5
-
-
-
Max.
0.9
18
75
50
Unit
K/W
K/W
K/W
K/W
Note/TestCondition
-
-
-
-
Thermal resistance, junction - ambient,
R
thJA
minimal footprint
Thermal resistance, junction - ambient,
R
thJA
6 cm
2
cooling area
1)
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
see Diagram 3
Final Data Sheet
3
Rev.2.8,2015-12-15
OptiMOS
TM
3Power-Transistor,120V
BSC077N12NS3G
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
1)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
120
2
-
-
-
-
-
40
Typ.
-
3
0.01
10
1
6.6
1
80
Max.
-
4
1
100
100
7.7
1.5
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=110µA
V
DS
=100V,V
GS
=0V,T
j
=25°C
V
DS
=100V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=50A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=50A
Table5Dynamiccharacteristics
1)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
4300
550
28
15
8
26
7
Max.
5700
730
49
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=60V,f=1MHz
V
GS
=0V,V
DS
=60V,f=1MHz
V
GS
=0V,V
DS
=60V,f=1MHz
V
DD
=60V,V
GS
=10V,I
D
=25A,
R
G,ext
=2.7Ω
V
DD
=60V,V
GS
=10V,I
D
=25A,
R
G,ext
=2.7Ω
V
DD
=60V,V
GS
=10V,I
D
=25A,
R
G,ext
=2.7Ω
V
DD
=60V,V
GS
=10V,I
D
=25A,
R
G,ext
=2.7Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Symbol
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
Values
Min.
-
-
-
-
-
-
Typ.
21
15
29
66
4.7
76
Max.
-
-
-
88
-
100
Unit
nC
nC
nC
nC
V
nC
Note/TestCondition
V
DD
=60V,I
D
=25A,V
GS
=0to10V
V
DD
=60V,I
D
=25A,V
GS
=0to10V
V
DD
=60V,I
D
=25A,V
GS
=0to10V
V
DD
=60V,I
D
=25A,V
GS
=0to10V
V
DD
=60V,I
D
=25A,V
GS
=0to10V
V
DD
=60V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition.
Final Data Sheet
4
Rev.2.8,2015-12-15
OptiMOS
TM
3Power-Transistor,120V
BSC077N12NS3G
Table7Reversediode
Parameter
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.9
98
264
Max.
98
392
1.2
-
-
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=50A,T
j
=25°C
V
R
=60V,I
F
=25,di
F
/dt=100A/µs
V
R
=60V,I
F
=25,di
F
/dt=100A/µs
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.8,2015-12-15
京公网安备 11010802033920号
EEWORLD
