PMZB670UPE
83B
20 V, single P-channel Trench MOSFET
Rev. 3 — 23 March 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
SO
T8
1.2 Features and benefits
Very fast switching
Low threshold voltage
Trench MOSFET technology
ESD protection up to 2 kV
Ultra thin package profile of 0.37 mm
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; I
D
= -400 mA; T
j
= 25 °C
[1]
Conditions
T
j
= 25 °C
Min
-
-8
-
-
Typ
-
-
-
0.67
Max
-20
8
-680
0.85
Unit
V
V
mA
Ω
Static characteristics
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
NXP Semiconductors
PMZB670UPE
20 V, single P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
3
2
Transparent
top view
G
D
Simplified outline
Graphic symbol
DFN1006B-3
(SOT883B)
S
017aaa259
3. Ordering information
Table 3.
Ordering information
Package
Name
PMZB670UPE
DFN1006B-3
Description
Leadless ultra small plastic package; 3 solder lands;
body 1.0 x 0.6 x 0.37 mm
Version
SOT883B
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
0000 1011
Type number
PMZB670UPE
[1]
For DFN1006B-3 (SOT883B) binary marking code description see
Figure 1.
4.1 Binary marking code description
PIN 1 INDICATION
READING DIRECTION
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig 1.
DFN1006B-3 (SOT883B) binary marking code description
PMZB670UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 23 March 2012
2 of 15
NXP Semiconductors
PMZB670UPE
20 V, single P-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
V
ESD
[1]
[2]
[3]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
= 25 °C
Min
-
-8
-
-
-
-
-
-
-55
-55
-65
T
amb
= 25 °C
HBM
[1]
Max
-20
8
-680
-425
-2.7
360
715
2700
150
150
150
-680
2000
Unit
V
V
mA
mA
A
mW
mW
mW
°C
°C
°C
mA
V
junction temperature
ambient temperature
storage temperature
source current
electrostatic discharge voltage
Source-drain diode
-
-
ESD maximum rating
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Measured between all pins.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 2.
Normalized total power dissipation as a
function of junction temperature
Fig 3.
Normalized continuous drain current as a
function of junction temperature
PMZB670UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 23 March 2012
3 of 15
NXP Semiconductors
PMZB670UPE
20 V, single P-channel Trench MOSFET
-10
I
D
(A)
-1
(1)
(2)
017aaa375
Limit R
DSon
= V
DS
/I
D
-10
-1
(3)
(4)
(5)
-10
-2
-10
-1
-1
-10
V
DS
(V)
-10
2
I
DM
= single pulse
(1) t
p
= 1 ms
(2) DC; T
sp
= 25 °C
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 4.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMZB670UPE
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 23 March 2012
4 of 15
NXP Semiconductors
PMZB670UPE
20 V, single P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
305
150
-
Max
360
175
40
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
10
3
017aaa109
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
10
2
0.25
0.1
0.2
0.05
0.02
0.01
0
10
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 5.
10
3
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa110
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
10
2
0.5
0.25
0.1
0.05
0.02
0.01
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
0.33
0.2
0
10
10
−3
FR4 PCB, mounting pad for drain 1 cm
2
Fig 6.
PMZB670UPE
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 23 March 2012
5 of 15
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