Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
4.0±0.2
3.0±0.2
0.7±0.1
s
Features
q
q
q
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (Ta=25˚C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54±0.15
EIAJ:SC–72
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 20mA
*2
I
C
= 500mA, I
B
= 20mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
0.6
*2
min
typ
max
100
2.0±0.2
(Ta=25˚C)
marking
+0.2
0.45–0.1
s
Absolute Maximum Ratings
15.6±0.5
Optimum for high-density mounting.
Allowing supply with the radial taping.
Low collector to emitter saturation voltage V
CE(sat)
.
Unit
nA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
800
V
V
MHz
pF
Ω
Pulse measurement
*1
h
FE1
Rank classification
R
200 ~ 350
S
300 ~ 500
T
400 ~ 800
*3
R
on
Measurement circuit
1kΩ
Rank
h
FE1
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
1
Transistor
P
C
— Ta
500
2.4
Ta=25˚C
2.0
2SD1450
I
C
— V
CE
100
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
Collector power dissipation P
C
(mW)
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Collector current I
C
(A)
400
1.6
I
B
=4.0mA
3.5mA
1.2
3.0mA
2.5mA
2.0mA
0.8
1.5mA
1.0mA
0.4
0.5mA
300
25˚C
200
100
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=25
1200
h
FE
— I
C
400
V
CE
=2V
f
T
— I
E
V
CB
=10V
Ta=25˚C
Forward current transfer ratio h
FE
1000
Transition frequency f
T
(MHz)
0.3
1
3
10
350
300
250
200
150
100
50
800
Ta=75˚C
600
25˚C
–25˚C
400
200
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
20
120
I
E
=0
f=1MHz
Ta=25˚C
NV — I
C
V
CE
=10V
G
V
=80dB
Function=FLAT
Collector output capacitance C
ob
(pF)
Noise voltage NV (mV)
16
100
80
R
g
=100kΩ
60
22kΩ
40
5kΩ
12
8
4
20
0
1
3
10
30
100
0
0.01
0.03
0.1
0.3
1
Collector to base voltage V
CB
(V)
Collector current I
C
(mA)
2
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