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BSP110,115

Description
mosfet tape-7 mosfet
CategoryDiscrete semiconductor    The transistor   
File Size101KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BSP110,115 Overview

mosfet tape-7 mosfet

BSP110,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-73
package instructionSOT-223, 4 PIN
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)0.325 A
Maximum drain current (ID)0.325 A
Maximum drain-source on-resistance7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)6 pF
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSP110
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
1
technology.
Product availability:
BSP110 in SOT223.
2. Features
s
s
s
s
TrenchMOS™ technology
Very fast switching
Logic level compatible
Surface mount package.
3. Applications
s
Relay driver
s
High speed line driver
s
Logic level translator.
c
c
4. Pinning information
Table 1:
Pin
1
2
3
4
Pinning - SOT223, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
03ab45
Simplified outline
Symbol
d
4
g
1
2
3
s
03ab30
SOT223
N-channel MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
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