Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BU2527DF
DESCRIPTION
・With
TO-3PFa package
・High
voltage
・High
speed switching
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BM
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current (DC)
Base current (Pulse)
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
12
30
8
12
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2527DF
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
800
V
V
EBO
V
CEsat
Emitter-base breakdown voltage
I
E
=600mA ;I
C
=0
I
C
=8A ;I
B
=1.6A
7.5
13.5
V
Collector-emitter saturation voltage
5.0
V
V
BEsat
Emitter-base saturation voltage
I
C
=8A ;I
B
=1.6A
V
CE
=BV
CES;
V
BE
=0
T
C
=125℃
V
EB
=6V; I
C
=0
110
1.1
1.0
2.0
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
11
h
FE-2
C
C
DC current gain
I
C
=8A ; V
CE
=5V
I
E
=0 ; V
CB
=10V；f=1MHz
5
10
Collector capacitance
145
pF
V
F
Diode forward voltage
I
F
=8A
2.0
V
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2527DF
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
JMnic
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EEWORLD
