SPD02N60 datasheet, PDF - EEWORLD Datasheet

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SPD02N60: DescriptionSIPMO Power Transistor; CategoryDiscrete semiconductor The transistor; File Size84KB，9 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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SPD02N60 Overview

SIPMO Power Transistor

SPD02N60 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	135 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	5.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON

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Preliminary data

SPD02N60

SPU02N60

SIPMOS

Power Transistor

•

N-Channel

•

Enhancement mode

•

Avalanche rated

Pin 1

Type

SPD02N60

SPU02N60

Pin 2

Pin 3

600 V 2 A

DS(on)

@ V

Package

= 10 V P-TO252

5.5

Ω

P-TO251

Ordering Code

Q67040-S4133

Q67040-S4127-A2

Maximum Ratings,

j = 25 °C, unless otherwise specified

Symbol

Parameter

Continuous drain current

Value

1.3

135

Unit

= 25 °C

= 100 °C

Pulsed drain current

Dpulse

= 25 °C

Avalanche energy, single pulse

= 2 A,

= 50 V,

= 25

Ω,

= 25 °C

Gate source voltage

Power dissipation

tot

stg

±20

-55 ... +150

55/150/56

°C

= 25 °C

Operating temperature

Storage temperature

IEC climatic category; DIN IEC 68-1

Semiconductor Group

10 / 1998

SPD02N60 Related Products

	SPD02N60	SPU02N60
Description	SIPMO Power Transistor	SIPMO Power Transistor
Maker	SIEMENS	SIEMENS
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknow	unknown
Avalanche Energy Efficiency Rating (Eas)	135 mJ	135 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	600 V
Maximum drain current (ID)	2 A	2 A
Maximum drain-source on-resistance	5.5 Ω	5.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSIP-T3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A	8 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON

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