DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D121
BYD1100
Hyper fast soft-recovery rectifier
Product specification
Supersedes data of 1998 Dec 03
1999 Nov 16
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Smallest surface mount rectifier
outline
•
Shipped in 8 mm embossed tape.
MAM061
BYD1100
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
T
tp
= 55
°C;
averaged over any
20 ms period; see Figs.2 and 4
T
tp
= 110
°C;
averaged over any
20 ms period; see Figs.2 and 4
T
amb
= 60
°C;
printed-circuit board
mounting, see Fig.12;
averaged over any 20 ms period;
see Figs.3 and 4
I
FRM
I
FSM
T
stg
T
j
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
T
tp
= 105
°C;
see Fig.6
T
amb
= 60
°C;
see Fig.7
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
CONDITIONS
MIN.
−
−
−
−
−
MAX.
100
100
2.7
1.7
V
V
A
A
UNIT
0.85 A
−
−
−
−65
−65
16
8
15
+175
+175
A
A
A
°C
°C
1999 Nov 16
2
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
I
R
PARAMETER
forward voltage
reverse avalanche breakdown
voltage
reverse current
CONDITIONS
I
F
= 1 A; T
j
= T
j max
; see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
V
R
= V
RRMmax
; see Fig.8
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.8
t
rr
reverse recovery time
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.10
f = 1 MHz; V
R
= 0; see Fig.9
when switched from
I
F
= 1 A to V
R
≥
30 V and
dI
F
/dt =
−1
A/µs; see Fig.11
MIN.
−
−
120
−
−
−
TYP.
−
−
−
−
−
−
BYD1100
MAX.
0.735 V
0.96
−
5
150
10
V
V
UNIT
µA
µA
ns
C
d
dI
R
--------
dt
diode capacitance
maximum slope of reverse
recovery current
−
−
70
−
−
2
pF
A/µs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.12.
For more information please refer to the
‘General Part of associated Handbook’.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
30
150
UNIT
K/W
K/W
1999 Nov 16
3
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
GRAPHICAL DATA
MGR567
BYD1100
MGR566
handbook, halfpage
4
handbook, halfpage
2.0
IF(AV)
(A)
3
IF(AV)
(A)
1.6
1.2
2
0.8
1
0.4
0
0
40
80
120
160
200
Ttp (°C)
0
0
40
80
120
160
200
Tamb (°C)
Switched mode application.
a = 1.42;
δ
= 0.5; V
R
= V
RRMmax
.
Switched mode application.
a = 1.42;
δ
= 0.5; V
R
= V
RRMmax
.
Device mounted as shown in Fig.12.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
2.0
MBK899
MGR563
P
(W)
1.6
a=3
2.5 2
1.57
1.42
handbook, halfpage
20
IF
(A)
16
1.2
12
0.8
8
0.4
4
0
0
0.4
0.8
1.2
1.6
2.0
IF(AV) (A)
0
0
1
2
3
VF (V)
4
a = I
F(RMS)
/I
F(AV)
;
δ
= 0.5; V
R
= V
RRMmax
.
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
Dotted line: T
j
= 175
°C.
Solid line: T
j
= 25
°C.
Fig.5
Maximum forward voltage as a function of
forward current.
1999 Nov 16
4
Philips Semiconductors
Product specification
Hyper fast soft-recovery rectifier
BYD1100
handbook, full pagewidth
20
MGR571
IFRM
(A)
16
δ
= 0.05
12
0.1
8
0.2
4
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
tp
= 105
°C;
R
th j-tp
= 30 K/W; V
R
= V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 100 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
10
MGR570
IFRM
(A)
8
δ
= 0.05
6
0.1
4
0.2
2
0.5
1
0
10
−2
10
−1
1
10
10
2
10
3
tp (ms)
10
4
T
amb
= 60
°C;
R
th j-a
= 150 K/W; V
R
= V
RRMmax
during 1
− δ;
curves include derating for T
j max
at V
RRM
= 100 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 16
5
京公网安备 11010802033920号
EEWORLD
