DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D119
BYD123
Ultra fast low-loss rectifier
Product specification
Supersedes data of 1998 Dec 04
1999 Feb 10
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Available in ammo-pack.
handbook, 4 columns
BYD123
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec™
(1)
technology. This package is
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F(AV)
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
average forward current
T
tp
= 115
°C;
lead length = 10 mm;
averaged over any 20 ms period;
see Figs 5 and 6
t = 10 ms half sinewave;
V
R
= V
RRMmax
CONDITIONS
−
−
−
MIN.
MAX.
200
200
1
V
V
A
UNIT
I
FSM
T
stg
T
j
non-repetitive peak forward current
storage temperature
junction temperature
−
−65
−65
25
+175
+175
A
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
t
rr
PARAMETER
forward voltage
reverse current
reverse recovery time
CONDITIONS
I
F
= 1 A; see Fig.2; T
j
= 150
°C
I
F
= 1 A; see Fig.2
V
R
= V
RRMmax
; see Fig.3
V
R
= V
RRMmax
; T
j
= 150
°C;
see Fig.3
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A
MAX.
0.8
0.93
2
50
25
V
V
µA
µA
ns
UNIT
1999 Feb 10
2
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
BYD123
VALUE
60
120
UNIT
K/W
K/W
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.7.
For more information please refer to the
“General part of the associated handbook”.
1999 Feb 10
3
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
GRAPHICAL DATA
BYD123
MGR648
handbook, halfpage
10
10
2
handbook, halfpage
IR
(µA)
Tj = 175
°C
MGR651
IF
(A)
8
Tj = 175
°C
100
°C
6
25
°C
10
1
100
°C
4
10
−1
25
°C
2
10
−2
0
0
0.4
0.8
1.2
1.6
VF (V)
2
10
−3
0
40
80
120
160
200
VR (V)
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
10
2
handbook, halfpage
MGR639
MGR642
handbook, halfpage
3
IF(AV)
Cd
(pF)
(A)
2
Tj = 25°C
10
lead length = 10 mm
1
1
1
10
VR (V)
10
2
0
0
40
80
120
200
160
Ttp (°C)
Fig.5
Fig.4
Diode capacitance as a function of
reverse voltage; typical values.
Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
1999 Feb 10
4
Philips Semiconductors
Product specification
Ultra fast low-loss rectifier
BYD123
MGR654
3
handbook, halfpage
P
(W)
a=3
2.5
2.0
handbook, halfpage
50
25
1.57
1.42
2
7
50
1
2
3
0
0
0.4
0.8
1.2
1.6
2
IF(AV) (A)
MGA200
Fig.6
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Dimensions in mm.
Fig.7
Device mounted on a printed-circuit board.
1999 Feb 10
5
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