DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BYD13 series
Controlled avalanche rectifiers
Product specification
Supersedes data of April 1992
1996 May 24
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
DESCRIPTION
MARKING
Cavity free cylindrical glass package
through Implotec™
(1)
technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
BYD13 series
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
TYPE NUMBER
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
13D PH
13G PH
13J PH
13K PH
13M PH
MARKING CODE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
V
RWM
crest working reverse voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
V
R
continuous reverse voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
200
400
600
800
1000
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
1996 May 24
2
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
SYMBOL
I
F(AV)
PARAMETER
average forward current
CONDITIONS
T
tp
= 55
°C;
lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
T
amb
= 65
°C;
PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
MIN.
−
MAX.
1.40 A
UNIT
−
0.75 A
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.5
−
20
A
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
7
+175
+175
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYD13D
BYD13G
BYD13J
BYD13K
BYD13M
I
R
t
rr
C
d
reverse current
V
R
= V
RRMmax
; see Fig.7
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.7
reverse recovery time when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.10
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.8
CONDITIONS
I
F
= 1 A; T
j
= T
j max;
see Fig.6
I
F
= 1 A; see Fig.6
I
R
= 0.1 mA
225
450
650
900
1100
−
−
−
−
−
−
−
−
−
−
−
3
21
−
−
−
−
−
1
100
−
−
V
V
V
V
V
µA
µA
µs
pF
MIN.
−
−
TYP.
−
−
MAX.
0.93
1.05
UNIT
V
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.9.
For more information please refer to the
“General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
VALUE
60
120
UNIT
K/W
K/W
1996 May 24
3
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
GRAPHICAL DATA
MBG039
BYD13 series
handbook, halfpage
2.0
IF(AV)
(A)
handbook, halfpage
1.0
MBG055
IF(AV)
(A)
1.6
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0
0
40
80
120
200
160
Ttp (
o
C)
0
0
40
80
120
160
200
Tamb (
o
C)
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Lead length 10 mm.
a = 1.57; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig.9.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC741
handbook, halfpage
2.5
MGC736
P
(W)
2.0
handbook, halfpage
200
a = 3 2.5
2
1.57
1.42
Tj
(
o
C)
150
1.5
100
1.0
D
0.5
50
G
J
K
M
0
0
0.4
0.8
1.2
I
F(AV)
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
1.6
(A)
0
0
400
800
VR, V
RRM
1200
(V)
Fig.4
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.5
Maximum permissible junction temperature
as a function of reverse voltage.
1996 May 24
4
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
BYD13 series
MBG048
handbook, halfpage
6
10
3
handbook, halfpage
IR
(µA)
2
MGC739
IF
(A)
4
10
2
10
0
0
1
VF (V)
2
1
0
40
80
120
160
200
Tj (
o
C)
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
V
R
= V
RRMmax
.
Fig.6
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10
2
handbook, halfpage
MGC740
handbook, halfpage
50
25
Cd
(pF)
7
10
50
2
1
1
10
10
2
VR (V)
3
10
3
MGA200
f = 1 MHz; T
j
= 25
°C.
Dimensions in mm.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
Fig.9 Device mounted on a printed-circuit board.
1996 May 24
5
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