BSC072N03LD G
OptiMOS™3
Power-Transistors
Features
• Dual N-channel, logic level
• Fast switching MOSFETs for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC072N03LD G
Package
PG-TDSON-8
Marking
072N03LD
Product Summary
V
DS
R
DS(on),max
I
D
30
7.2
20
PG-TDSON-8
V
mΩ
A
C,
Maximum ratings,
at
T
j
=25 ° unless otherwise specified
Parameter
Symbol Conditions
Value
≤10
secs
Continuous drain current
I
D
V
GS
=10 V,
T
C
=25 °
C
V
GS
=10 V,
T
C
=100 °
C
V
GS
=4.5 V,
T
C
=25 °
C
V
GS
=4.5 V,
T
C
=100 °
C
V
GS
=10 V,
T
A
=25 °
3)
C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
I
D,pulse
E
AS
V
GS
P
tot
T
C
=25 °
C
T
A
=25 °
3)
C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Unit
steady state
20
20
20
20
A
17.9
80
90
±20
57
3.6
11.5
T
C
=25 °
C
I
D
=20 A,
R
GS
=25
Ω
mJ
V
W
1.5
T
j
,
T
stg
-55 ... 150
55/150/56
°
C
J-STD20 and JESD22
Rev. 1.4
page 1
2009-10-23
BSC072N03LD G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Thermal resistance, junction -
ambient, 6 cm² cooling area
3)
R
thJA
t≤10 s
steady state
-
-
-
-
-
-
2.2
20
35
85
K/W
Electrical characteristics,
at
T
j
=25 ° unless otherwise specified
C,
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °
C
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °
C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=20 A
V
GS
=10 V,
I
D
=20 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=20 A
30
1
-
-
-
0.1
-
2.2
1
µA
V
-
-
-
-
-
28
10
10
7.5
6.0
1.5
57
100
100
9.4
7.2
2.3
-
Ω
S
nA
mΩ
2)
3)
See figure 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
Rev. 1.4
page 2
2009-10-23
BSC072N03LD G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=15 V,
I
D
=20 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=20 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
7.2
3.8
3.4
6.8
15
3.0
31
-
-
-
-
20
-
41
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
2600
920
49
6.0
4.0
25
4.0
3500
1200
-
-
-
-
-
ns
pF
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
13
24
-
-
nC
I
S
T
C
=25 °
C
I
S,pulse
V
SD
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °
C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.87
20
80
1.1
A
V
Reverse recovery charge
Q
rr
-
-
10
nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.4
page 3
2009-10-23
BSC072N03LD G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
60
25
50
20
40
15
P
tot
[W]
30
I
D
[A]
10
5
0
0
40
80
120
160
0
40
80
120
160
20
10
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °
D
=0
C;
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
limited by on-state
resistance
10
2
10 ms
1 µs
10 µs
0.5
1
Z
thJC
[K/W]
100 µs
I
D
[A]
DC
0.2
0.1
0.05
10
1
1 ms
0.1
10
0
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.4
page 4
2009-10-23
BSC072N03LD G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °
C
parameter:
V
GS
80
10 V
5V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °
C
parameter:
V
GS
20
70
4.5 V
3V
60
15
40
R
DS(on)
[m
Ω
]
50
4V
3.5 V
3.2 V
3.5 V
I
D
[A]
10
4V
4.5 V
10 V
5V
30
3.2 V
20
3V
5
10
2.8 V
0
0
1
2
3
0
0
10
20
30
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
80
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °
C
80
70
70
60
60
50
50
40
g
fs
[S]
150 °
C
25 °
C
I
D
[A]
40
30
30
20
20
10
10
0
0
1
2
3
4
5
0
0
10
20
30
V
GS
[V]
I
D
[A]
Rev. 1.4
page 5
2009-10-23
京公网安备 11010802033920号
EEWORLD
