Type
BSC22DN20NS3 G
OptiMOS
TM
3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Low on-resistance
R
DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
200
225
7
V
mΩ
A
PG-TDSON-8
Type
BSC22DN20NS3 G
Package
PG-TDSON-8
Marking
22DN20NS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
2)
Value
7.0
4.9
28
30
10
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=3.5 A,
R
GS
=25
Ω
mJ
kV/µs
V
W
°C
T
C
=25 °C
34
-55 ... 150
55/150/56
J-STD20 and JESD22
see figure 3
Rev. 2.2
page 1
2011-05-20
BSC22DN20NS3 G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
6 cm
2
cooling area
3)
-
-
-
-
3.7
50
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=13 µA
V
DS
=160 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=160 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
GSS
R
DS(on)
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=3.5 A
V
GS
=20 V,
V
DS
=0 V
V
GS
=10 V,
I
D
=3.5 A
200
2
-
-
3
0.1
-
4
1
µA
V
-
-
-
-
3.5
10
1
194
1.6
7
100
100
225
-
-
nA
mΩ
Ω
S
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
Rev. 2.2
page 2
2011-05-20
BSC22DN20NS3 G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
4)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=100 V,
V
GS
=10 V,
I
D
=3.5 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
-
-
-
-
-
-
-
320
24
5.1
4
4.0
6
3
430
32
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=100 V,
V
GS
=0 V
V
DD
=100 V,
I
D
=3.5 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
1.4
0.8
1.3
4.2
4.5
8
-
-
-
5.6
-
11
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=7 A,
T
j
=25 °C
V
R
=100 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
1
70
156
7
28
1.2
-
-
A
V
ns
nC
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2011-05-20
BSC22DN20NS3 G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
40
8
7
30
6
5
P
tot
[W]
I
D
[A]
20
4
3
10
2
1
0
0
40
80
120
160
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
2
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
1
100 µs
0.5
I
D
[A]
1 ms
10 ms
Z
thJC
[K/W]
10
0
0.2
0.1
0.05
0.02
0.01
single pulse
10
0
DC
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2011-05-20
BSC22DN20NS3 G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
20
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
320
280
15
7V
6V
240
5V
5.5 V
6V
R
DS(on)
[m
Ω
]
200
8V
10 V
I
D
[A]
10
5.5 V
160
120
5V
5
4.5 V
80
40
0
0
1
2
3
4
5
0
0
2
4
6
8
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
16
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
16
14
14
12
12
10
10
8
g
fs
[S]
150 °C
25 °C
I
D
[A]
8
6
6
4
4
2
2
0
0
2
4
6
8
0
0
5
10
15
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2011-05-20
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