Product Specification
www.jmnic.com
Silicon NPN Power Transistor
BU941
DESCRIPTION
・High
Voltage
・DARLINGTON
APPLICATIONS
・High
ruggedness electronic ignitions
・High
voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
500
400
5
15
30
1
5
180
200
-65~200
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
0.97
UNIT
℃/W
Product Specification
www.jmnic.com
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
BU941
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 0.1A; I
B
= 0;L= 10mH
400
V
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
V
BE
(sat)-3
I
CES
I
CEO
Collector-Emitter Saturation Voltage
I
C
= 8 A; I
B
= 100mA
I
C
= 10 A; I
B
= 250mA
1.6
V
Collector-Emitter Saturation Voltage
1.8
V
Collector-Emitter Saturation Voltage
I
C
= 12 A; I
B
= 300mA
2.0
V
Base-Emitter Saturation Voltage
I
C
= 8 A; I
B
= 100mA
2.2
V
Base-Emitter Saturation Voltage
I
C
= 10 A; I
B
= 250mA
2.5
V
Base-Emitter Saturation Voltage
I
C
= 12 A; I
B
= 300mA
V
CE
= 500V;V
BE
= 0
V
CE
= 500V;V
BE
= 0;T
j
= 125℃
V
CE
= 450V; I
B
= 0
V
CE
= 450V; I
B
= 0;T
j
= 125℃
V
EB
= 5V; I
C
= 0
2.7
0.1
0.5
0.1
0.5
20
V
Collector Cutoff Current
mA
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE
DC Current Gain
I
C
= 5A ; V
CE
= 10V
300
V
ECF
C-E Diode Forward Voltage
I
F
= 10A
2.5
V
MCU
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