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MRFE6VS25LR5

Description
transistors RF mosfet vhv6e 25w50v ni360l
Categorysemiconductor    Discrete semiconductor   
File Size1MB,26 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance  
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transistors RF mosfet vhv6e 25w50v ni360l

MRFE6VS25LR5 Parametric

Parameter NameAttribute value
ManufactureFreescale Semiconduc
Product CategoryTransistors RF MOSFET
RoHSYes
ConfiguratiSingle
Transistor PolarityN-Channel
Frequency1.8 MHz to 2000 MHz
Gai25.9 dB
Vds - Drain-Source Breakdown Voltage140 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseNI-360-2
PackagingReel
Minimum Operating Temperature- 40 C
Factory Pack Quantity50
Vgs th - Gate-Source Threshold Voltage2 V
Unit Weigh3 g
Freescale Semiconductor
Technical Data
Document Number: MRFE6VS25L
Rev. 0, 10/2012
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
MRFE6VS25LR5
RF power transistor designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at frequencies from 1.8 to
2000 MHz. This device is fabricated using Freescale’s enhanced ruggedness
platform and is suitable for use in applications where high VSWRs are
encountered.
Typical Performance:
V
DD
= 50 Volts
Frequency
(MHz)
1.8--30
(1,3)
30--512
(2,3)
512
(4)
Signal Type
Two--Tone
(10 kHz spacing)
Two--Tone
(200 kHz spacing)
Pulse
(100
μsec,
20%
Duty Cycle)
CW
P
out
(W)
25 PEP
25 PEP
25 Peak
G
ps
(dB)
25.0
17.3
25.9
η
D
(%)
50.0
32.0
74.0
IMD
(dBc)
--28
--32
1.8-
-2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
512
(4)
25
26.0
75.0
NI-
-360-
-2
Load Mismatch/Ruggedness
Frequency
(MHz)
30
(1)
Signal Type
CW
VSWR
>65:1
at all Phase
Angles
P
in
(W)
0.11
(3 dB
Overdrive)
0.95
(3 dB
Overdrive)
0.14 Peak
(3 dB
Overdrive)
0.14
(3 dB
Overdrive)
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Test
Voltage
50
Result
No Device
Degradation
Gate 1
2 Drain
512
(2)
CW
512
(4)
Pulse
(100
μsec,
20%
Duty Cycle)
CW
512
(4)
Figure 1. Pin Connections
1. Measured in 1.8--30 MHz broadband reference circuit.
2. Measured in 30--512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.
Features
Wide Operating Frequency Range
Extreme Ruggedness
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Extended ESD Protection Circuit
In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MRFE6VS25LR5
1
RF Device Data
Freescale Semiconductor, Inc.
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