P010XX
Sensitive standard SCRs up to 0.8 A
Datasheet
−
production data
A
Description
A
G
K
KA
K
G
G
Thanks to highly sensitive triggering levels, the
P010XX SCR series is suitable for all applications
where available gate current is limited, such as
ground fault circuit interrupters, pilot circuits in
solid state relays, stand-by mode power supplies,
smoke and alarm detectors.
Available in through-hole or surface mount
packages, the voltage capability of this series has
been upgraded since its introduction and is now
available up to 600 V.
Table 1. Device summary
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
up to 0.8
up to 600
From 5 to 200
Unit
A
V
µA
A
TO-92
(P010xxA)
SOT-223
(P0102xN)
A
G
K
SOT23-3L
(P010xxL)
Features
•
On-state rms current, 0.8 A
•
Repetitive peak off-state voltage up to 600 V
•
Triggering gate current from 5 to 200 µA
•
ECOPACK
®
2 compliant component
April 2014
This is information on a product in full production.
DocID15197 Rev 2
1/12
www.st.com
Characteristics
P010xx
1
Characteristics
Table 2. Absolute ratings (limiting values) P010xxA and P010xxN
Symbol
I
T(RMS)
Parameter
TO-92
On-state rms current (180° conduction angle)
SOT-223
TO-92
Average on-state current (180° conduction angle)
SOT-223
Non repetitive surge peak on-state current
I
²
t value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
l
= 55 °C
T
amb
= 70 °C
T
l
= 55 °C
T
amb
= 70 °C
Value
0.8
Unit
A
IT
(AV)
0.5
8
A
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
A
7
0.24
50
1
0.1
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
Table 3. Absolute ratings (limiting values) P010xxL
Symbol
I
T(RMS)
IT
(AV)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
Parameter
On-state rms current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state current
I
²
t value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
amb
= 36 °C
T
amb
= 36 °C
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
Value
0.25
0.16
7
A
6
0.18
50
0.5
0.02
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
Unit
A
A
2/12
DocID15197 Rev 2
P010xx
Table 4. Electrical characteristics
(1)
P010xxA and P010xxN
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 12 V, R
L
= 140
Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ, R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 kΩ
I
G
= 1 mA, R
GK
= 1 kΩ
V
D
= 67% V
DRM,
R
GK
= 1 kΩ
I
TM
= 1.6 A, tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
= 400 V
V
DRM
= V
RRM
= 600 V
V
DRM
= V
RRM
1. T
j
= 25 °C, unless otherwise specified
Characteristics
Test conditions
Max.
Max.
T
j
= 125 °C
Min.
Min.
Max.
Max.
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 25 °C
T
j
= 125 °C
Min.
Max.
Max.
Max.
Value
200
0.8
0.1
8
5
6
75
1.95
0.95
600
1
Max.
10
100
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
Table 5. Electrical characteristics
(1)
P010xxL
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 12 V, R
L
= 140
Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ, R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA, R
GK
= 1 kΩ
I
G
= 1 mA, R
GK
= 1 kΩ
V
D
= 67% V
DRM
, R
GK
= 1 kΩ
I
TM
= 0.4 A, tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
Test conditions
Max.
Max.
Min.
Min.
Max.
Max.
Min.
Max.
Max.
Max.
Max.
100
200
1.7
1.0
1000
1
µA
P0102xL
200
0.8
0.1
8
6
7
100
P0109AL
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
1. T
j
= 25 °C, unless otherwise specified
DocID15197 Rev 2
3/12
12
Characteristics
Table 6. Electrical device summary
Voltage
Order code
100 V
P0102AA 1AA3
P0102AA 5AL3
P0102AL 5AA4
P0102BA 1AA3
P0102BL 5AA4
P0102DA 1AA3
P0102DA 2AL3
P0102DA 5AL3
P0102DN 5AA4
P0102MA 1AA3
P0102MN 5AA4
P0109AL 5AA4
P0109DA 1AA3
P0109DA 5AL3
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
200 V
400 V
600 V
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
200 µA
1 µA
1 µA
1 µA
TO-92
TO-92
SOT23-3L
TO-92
SOT23-3L
TO-92
TO-92
TO-92
SOT-223
TO-92
SOT-223
SOT23-3L
TO-92
TO-92
Bulk
Sensitivity
Package
P010xx
Packing mode
Tape and reel 13 inch
Tape and reel 7 inch
Bulk
Tape and reel 7 inch
Bulk
Ammopack
Tape and reel 13 inch
Tape and reel 7 inch
Bulk
Tape and reel 7 inch
Tape and reel 7 inch
Bulk
Tape and reel 13 inch
Table 7. Thermal resistance
Symbol
R
th(j-a)
R
th(j-t)
R
th(j-a)
R
th(j-a)
Junction to case (DC)
Junction to tab (DC)
Junction to ambient (DC)
Parameter
TO-92
SOT-223
TO-92
S
(1)
= 5 cm
2
SOT-223
SOT23-3L
Maximum
80
30
150
°C/W
60
400
°C/W
Unit
°C/W
°C/W
Junction to ambient (mounted on FR4 with recommended pad
layout)
1. S = Copper surface under tab.
4/12
DocID15197 Rev 2
P010xx
Characteristics
Figure 1. Maximum average power dissipation
versus average on-state current P010xxA and
P010xxN
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
360°
α
= 180°
Figure 2. Maximum average power dissipation
versus average on-state current P010xxL
P(W)
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00
α
= 180°
360°
I
T(AV)
(A)
α
I
T(AV)
(A)
0.02
0.04
0.06
0.08
0.10
0.12
0.14
α
0.16
0.18
Figure 3. Average and DC on-state current
versus lead temperature
P010xxA and P010xxN
I
T(AV)
(A)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
α
= 180°
(TO-92)
α
= 180°
(SOT-223)
D.C.
(TO-92)
D.C.
(SOT-223)
Figure 4. Average and DC on-state current
versus ambient temperature P010xxA and
P010xxN
I
T(AV)
(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
α
= 180°
(TO-92)
D.C.
(TO-92)
α
= 180°
(SOT-223)
D.C.
(SOT-223)
Device mounted on
FR4 with recomended
pad layout for SOT-223
T
lead
(°C)
T
amb
(°C)
75
100
125
DocID15197 Rev 2
5/12
12