FGD3245G2_F085 / FGB3245G2_F085
May 2014
FGD3245G2_F085 / FGB3245G2_F085
EcoSPARK
®
2 320mJ, 450V, N-Channel Ignition IGBT
Features
SCIS Energy = 320mJ at T
J
= 25
o
C
Logic Level Gate Drive
Low Saturation Voltage
Qualified to AEC Q101
RoHS Compliant
General Description
The FGB3245G2_F085 and FGD3245G2 are N-channel
IGBTs designed in Fairchild's EcoSPARK-2 technology
which helps in eliminating external protection circuitry. The
technology is optimized for driving the coil in the harsh
environment of automotive ignition systems and offers out-
standing Vsat and SCIS Energy capability also at elevated
operating temperatures. The logic level gate input is ESD
protected and features an integrated gate resistor. An inte-
grated zener-circuitry clamps the IGBT's collecter- to-emit-
ter voltage at 450V which enables systems requiring a
higher spark voltage
Applications
Automotive lgnition Coil Driver Circuits
Coil On Plug Applications
Package
Symbol
JEDEC TO-263AB
D²-Pak
COLLECTOR
G
E
COLLECTOR
(FLANGE)
R
1
GATE
R
2
JEDEC TO-252AA
D-Pak
COLLECTOR
(FLANGE)
EMITTER
G
E
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
1
www.fairchildsemi.com
FGD3245G2_F085 / FGB3245G2_F085
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
BV
CER
Collector to Emitter Breakdown Voltage (I
C
= 1mA)
BV
ECS
E
SCIS25
I
C25
I
C110
V
GEM
P
D
T
J
T
STG
T
L
T
PKG
ESD
Emitter to Collector Voltage - Reverse Battery Condition (I
C
= 10mA)
Self Clamping Inductive Switching Energy (Note 1)
Collector Current Continuous, at V
GE
= 4.0V, T
C
= 25°C
Collector Current Continuous, at V
GE
= 4.0V, T
C
= 110°C
Gate to Emitter Voltage Continuous
Power Dissipation Total, at T
C
= 25°C
Power Dissipation Derating, for T
C
> 25 C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Max. Lead Temp. for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
o
Rating
450
28
320
180
23
23
±10
150
1.1
-40 to +175
-40 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/
o
C
o
o
o
o
E
SCIS150
Self Clamping Inductive Switching Energy (Note 2)
C
C
C
C
kV
kV
Package Marking and Ordering Information
Device Marking
FGD3245G2
FGB3245G2
Device
FGD3245G2_F085
FGB3245G2_F085
Package
TO252AA
TO263AB
Reel Size
330mm
330mm
Tape Width
16mm
24mm
Quantity
2500 units
800 units
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
BV
CER
I
CE
= 2mA, V
GE
= 0,
Collector to Emitter Breakdown Voltage R
GE
= 1KΩ,
T
J
= -40 to 150
o
C
I
CE
= 10mA, V
GE
= 0V,
Collector to Emitter Breakdown Voltage R
GE
= 0,
T
J
= -40 to 150
o
C
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
I
CE
= -75mA, V
GE
= 0V,
T
J
= 25°C
I
GES
= ±2mA
V
CE
= 250V, R
GE
= 1KΩ
V
EC
= 24V,
T
J
=
T
J
=
T
J
=
T
J
= 25 C
25
o
C
150
o
C
o
420
-
480
V
BV
CES
BV
ECS
BV
GES
I
CER
I
ECS
R
1
R
2
440
28
±12
-
-
-
-
-
10K
150
o
C
-
-
±14
-
-
-
-
120
-
500
-
-
25
1
1
40
-
30K
V
V
V
μA
mA
mA
Ω
Ω
On State Characteristics
V
CE(SAT)
Collector to Emitter Saturation Voltage I
CE
= 6A, V
GE
= 4V,
V
CE(SAT)
Collector to Emitter Saturation Voltage I
CE
= 10A, V
GE
= 4.5V,
V
CE(SAT)
Collector to Emitter Saturation Voltage I
CE
= 15A, V
GE
= 4.5V,
T
J
= 25
o
C
T
J
= 150 C
T
J
= 150 C
o
o
-
-
-
1.13
1.32
1.64
1.25
1.50
1.85
V
V
V
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
2
www.fairchildsemi.com
FGD3245G2_F085 / FGB3245G2_F085
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
V
GEP
Gate Charge
Gate to Emitter Threshold Voltage
Gate to Emitter Plateau Voltage
I
CE
= 10A, V
CE
= 12V,
V
GE
= 5V
I
CE
= 1mA, V
CE
= V
GE,
V
CE
= 12V, I
CE
= 10A
-
T
J
= 25
o
C
T
J
=
1.3
0.75
-
150
o
C
23
1.6
1.1
2.7
-
2.2
1.8
-
nC
V
V
Switching Characteristics
t
d(ON)R
t
rR
t
d(OFF)L
t
fL
E
SCIS
Current Turn-On Delay Time-Resistive V
CE
= 14V, R
L
= 1Ω
V
GE
= 5V, R
G
= 1KΩ
Current Rise Time-Resistive
T
J
= 25
o
C,
Current Turn-Off Delay Time-Inductive V
CE
= 300V, L = 1mH,
V
GE
= 5V, R
G
= 1KΩ
Current Fall Time-Inductive
I
CE
= 6.5A, T
J
= 25
o
C,
L = 3.0 mHy,R
G
= 1KΩ,
Self Clamped Inductive Switching
V
GE
= 5V, (Note 1)
-
-
-
-
T
J
= 25°C
-
0.9
2.6
5.4
2.7
-
4
7
15
15
320
μs
μs
μs
μs
mJ
Thermal Characteristics
R
θJC
Thermal Resistance Junction to Case
All packages
-
-
0.9
o
C/W
Notes:
1: Self Clamping Inductive Switching Energy (E
SCIS25
) of 320 mJ is based on the test conditions that starting
Tj=25
o
C; L=3mHy, I
SCIS
=14.6A,V
CC
=100V during inductor charging and V
CC
=0V during the time in clamp
.
2: Self Clamping Inductive Switching Energy (E
SCIS150
) of 180 mJ is based on the test conditions that starting
Tj=150
o
C; L=3mHy, I
SCIS
=10.9A,V
CC
=100V during inductor charging and V
CC
=0V during the time in clamp
.
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
3
www.fairchildsemi.com
FGD3245G2_F085 / FGB3245G2_F085
Typical Performance Curves
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
100
I
SCIS
, INDUCTIVE SWITCHING CURRENT (A)
40
R
G
= 1K
Ω
, V
GE
= 5V, V
CE
= 100V
T
J
= 25 C
o
o
R
G
= 1K
Ω
, V
GE
= 5V, V
CE
= 100V
30
10
T
J
= 150 C
20
T
J
= 25 C
o
10
T
J
= 150 C
o
1
SCIS Curves valid for V
clamp
Voltages of <430V
1
10
100
t
CLP
, TIME IN CLAMP (
μ
S)
1000
0
SCIS Curves valid for V
clamp
Voltages of <430V
0
3
6
9
12
L, INDUCTANCE (mHy)
15
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
1.20
V
GE
= 3.7V
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
V
CE
,
COLLECTOR TO EMITTER VOLTAGE (V)
1.45
1.40
1.35
1.30
1.25
V
GE
= 5V
V
GE
= 8V
I
CE
= 6A
V
GE
= 4.0V
I
CE
= 10A
V
GE
= 3.7V
V
GE
= 4.0V
V
GE
= 4.5V
1.15
1.10
V
GE
= 8V
1.05
V
GE
= 5V
V
GE
= 4.5V
1.20
1.15
-50
1.00
-50
-25
0
25 50 75 100 125 150 175
o
T
J
, JUNCTION TEMPERTURE ( C)
-25
0
25 50 75 100 125 150 175
o
T
J
, JUNCTION TEMPERTURE ( C)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
V
GE
= 8.0V
V
GE
= 5.0V
V
GE
= 4.5V
30
V
GE
= 4.0V
V
GE
= 3.7V
40
V
GE
= 8.0V
V
GE
= 5.0V
V
GE
= 4.5V
30
V
GE
= 4.0V
V
GE
= 3.7V
20
20
10
T
J
= -40 C
o
10
T
J
= 25 C
o
0
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
4
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
www.fairchildsemi.com
FGD3245G2_F085 / FGB3245G2_F085
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
40
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
= 8.0V
V
GE
= 5.0V
V
GE
= 4.5V
30
V
GE
= 4.0V
V
GE
= 3.7V
40
30
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
CE
= 5V
20
20
T
J
= 175
o
C
10
T
J
= 175 C
o
10
T
J
= 25
o
C
T
J
= -40
o
C
0
0
1
2
3
4
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
4.5
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
I
CE
, DC COLLECTOR CURRENT (A)
V
GE
= 5.0V
V
TH
, THRESHOLD VOLTAGE (V)
30
1.8
1.6
1.4
1.2
1.0
0.8
-50
V
CE
=
V
GE
I
CE
= 1m
A
20
10
0
25
50
75
100
125
150
o
T
C
, CASE TEMPERATURE( C)
175
-25
0
25 50 75 100 125 150 175
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
10000
LEAKAGE CURRENT (
μ
A)
1000
100
10
1
V
CES
= 250V
12
I
CE
= 6.5A, V
GE
= 5V, R
G
= 1K
Ω
SWITCHING TIME (
μ
S)
V
ECS
= 24V
10
8
6
4
2
0
25
Resistive t
ON
Inductive t
OFF
V
CES
= 300V
0.1
-50
-25
0
25 50 75 100 125 150 175
o
T
J
, JUNCTION TEMPERATURE ( C)
50
75
100
125
150
o
T
J
, JUNCTION TEMPERATURE ( C)
175
Figure 11. Leakage Current vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
@2014 Fairchild Semiconductor Corporation
FGB3245G2_F085 / FGB3245G2_F085 Rev. C1
5
www.fairchildsemi.com
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