EEWORLDEEWORLDEEWORLD

Part Number

Search

PDTC114ET,215

Description
transistors switching - resistor biased trans ret tape-7
CategoryDiscrete semiconductor    The transistor   
File Size716KB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PDTC114ET,215 Overview

transistors switching - resistor biased trans ret tape-7

PDTC114ET,215 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
Parts packaging codeTO-236
package instructionPLASTIC PACKAGE-3
Contacts3
Manufacturer packaging codeSOT23
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.3 V
Base Number Matches1
PDTC114E series
NPN resistor-equipped transistors;
R1 = 10 k, R2 = 10 k
Rev. 12 — 21 December 2011
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
PDTC114EE
PDTC114EM
PDTC114ET
PDTC114EU
SOT416
SOT883
SOT23
SOT323
JEITA
SC-75
SC-101
-
SC-70
JEDEC
-
-
-
PNP
complement
PDTA114EE
PDTA114EM
PDTA114EU
Package
configuration
ultra small
leadless ultra small
small
very small
Type number
TO-236AB PDTA114ET
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
1.3 Applications
Digital application in automotive and
industrial segments
Control of IC inputs
Cost-saving alternative for BC847/857
series in digital applications
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
7
0.8
Typ
-
-
10
1.0
Max
50
100
13
1.2
Unit
V
mA
k

PDTC114ET,215 Related Products

PDTC114ET,215 PDTC114ET,235
Description transistors switching - resistor biased trans ret tape-7 transistors switching - resistor biased trans ret tape-11
Brand Name NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to
Parts packaging code TO-236 TO-236
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3
Manufacturer packaging code SOT23 SOT23
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A
Collector-based maximum capacity 3.5 pF 3.5 pF
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 30 30
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
VCEsat-Max 0.3 V 0.3 V

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1250  448  2534  1463  1572  26  10  52  30  32 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号