BSO203SP H
OptiMOS
®
P-Power-Transistor
Features
• single P-Channel in SO8
• Qualified according JEDEC for target applications
• 150°C operating temperature
• Super Logic Level (2.5V rated)
Product Summary
V
DS
R
DS(on),max
V
GS
=4.5 V
V
GS
=2.5 V
I
D
-20
21
34
-8.9
A
V
mΩ
• Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21
PG-DSO-8
Type
BSO203SP H
Package
PG-DSO-8
Marking
203SP
Lead free
Yes
Halogen free
Yes
Packing
dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
10 secs
Continuous drain current
1)
I
D
V
GS
= -4.5 V,
T
A
=25 °C
V
GS
= -4.5 V,
T
A
=70 °C
V
GS
= -2.5 V,
T
A
=25 °C
V
GS
= -2.5 V,
T
A
=70 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
Rev.1.31
page 1
I
D,pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 HBM
T
A
=25 °C
2.5
-55 ... 150
1B (500V - 1 kV)
260
55/150/56
2010-02-10
°C
T
A
=25 °C
I
D
=--8.9 A,
R
GS
=25
Ω
-8.9
-7.1
-7.0
-5.6
-35.6
97
±12
1.6
mJ
V
W
°C
Value
steady state
-7.0
-5.8
-5.7
-4.5
A
Unit
BSO203SP H
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - soldering point
Thermal resistance,
junction - ambient
R
thJS
R
thJA
minimal footprint,
t
p
≤10
s
minimal footprint,
steady state
6 cm
2
cooling area
1)
,
t
p
≤10
s
6 cm
2
cooling area
1)
,
steady state
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS(th)
I
DSS
V
GS
=0 V,
I
D
= -
0.25 mA
V
DS
=V
GS
,
I
D
= -100 µA
V
DS
= -20 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
= -20 V,
V
GS
=0 V,
T
j
=150 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
= -12 V,
V
DS
=0 V
V
GS
=2.5 V,
I
D
=-7 A
V
GS
=4.5 V,
I
D
=-8.9 A
Gate resistance
Transconductance
1)
Values
typ.
max.
Unit
-
-
35
K/W
-
-
-
-
-
-
110
150
53
-
-
80
-20
-0.6
-
-
-0.9
-
-
-1.2
-1
V
µA
-
-
-100
-
-
-
-
-
22
15
3.3
33
-100
34
21
-
-
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-7.1 A
Ω
S
18
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
See figure 3 for more detailed information
See figure 13 for more detailed information
2)
3)
Rev.1.31
page 2
2010-02-10
BSO203SP H
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
A
=25 °C
V
GS
=0 V,
I
F
=-8.9 A,
T
j
=25 °C
V
R
=10 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
V
R
=10 V,
I
F
=I
D
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-3
-35.6
1.1
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
= -10 V,
V
GS
=0 V
V
DD
= -10 V,
I
D
=-8.9 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
-4
-4
-11
-12
-26
-1.6
16
-6
-6
-17
-18
-39
-
21
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= -10 V,
V
GS
=-
4.5 V,
I
D
=-8.9 A,
R
G
=
6
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
2500
820
680
16
55
45
74
3750
1230
1020
24
83
68
111
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
t
rr
-
26
39
ns
Reverse recovery charge
4)
Q
rr
-
14
21
nC
See figure 16 for gate charge parameter definition
Rev.1.31
page 3
2010-02-10
BSO203SP H
1 Power dissipation
P
tot
=f(T
A
);
t
p
≤10
s
2 Drain current
I
D
=f(T
A
);
t
p
≤10
s
parameter:
V
GS
3
10
9
2.5
8
7
6
2
P
tot
[W]
4.5 V
1.5
-I
D
[A]
0
40
80
120
160
5
4
1
3
2
1
0
0
0
40
80
T
A
[°C]
120
160
0.5
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C
1)
;
D
=0
parameter:
t
p
10
2
limited by on-state
resistance
100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
1)
parameter:
D
=t
p
/T
10
2
0.5
10 µs
0.2
10
10
1
1
1 ms
0.1
0.05
Z
thJA
[K/W]
I
D
[A]
0.02
10 ms
10
0
0.01
single pulse
10
0
DC
100 ms
10
-1
10
-1
10
-1
10
0
10
1
10
2
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev.1.31
page 4
2010-02-10
BSO203SP H
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
60
10 V
3V
2.5V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
50
45
40
35
2.5 V
50
4.5V
40
30
R
DS(on)
[m
Ω
]
30
25
20
15
10 V
-I
D
[A]
2V
3.0 V
3.5V
4.5 V
20
10
1.5V
10
5
0
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
0
-V
DS
[V]
-I
D
[A]
10 V
60
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
35
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
60
30
25
40
20
-I
D
[A]
15
150 °C
g
fs
[S]
20
25°C
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0
5
10
15
20
25
30
35
40
-V
GS
[V]
I
D
[A]
Rev.1.31
page 5
2010-02-10
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