DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC143T series
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2004 Apr 06
2004 Aug 06
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
General purpose switching and amplification
•
Inverter and interface circuits
•
Circuit applications.
DESCRIPTION
PDTC143T series
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
R1
R2
PARAMETER
collector-emitter
voltage
output current (DC)
bias resistor
open
TYP.
−
−
4.7
−
MAX.
50
100
−
−
UNIT
V
mA
kΩ
−
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TM
PDTC143TS
PDTC143TT
PDTC143TU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
40
11
52
DM
TC143T
*33
(1)
*52
(1)
PDTA143TE
PDTA143TEF
PDTA143TK
PDTA143TM
PDTA143TS
PDTA143TT
PDTA143TU
MARKING CODE
PNP COMPLEMENT
2004 Aug 06
2
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
PDTC143T series
PINNING
TYPE NUMBER
PDTC143TS
handbook, halfpage
SIMPLIFIED OUTLINE AND SYMBOL
PIN
1
2
1
2
3
1
3
MAM361
DESCRIPTION
base
collector
emitter
2
R1
3
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TT
PDTC143TU
1
Top view
2
MDB270
1
2
handbook, halfpage
base
emitter
collector
3
R1
1
3
3
2
PDTC143TM
handbook, halfpage
1
2
3
R1
1
3
1
2
Bottom view
MHC507
base
emitter
collector
3
2
2004 Aug 06
3
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PDTC143TE
PDTC143TEF
PDTC143TK
PDTC143TM
PDTC143TS
PDTC143TT
PDTC143TU
−
−
−
−
−
−
−
DESCRIPTION
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
PDTC143T series
VERSION
SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323
leadless ultra small plastic package; 3 solder lands; body
1.0
×
0.6
×
0.5 mm
plastic single-ended leaded (through hole) package; 3 leads
plastic surface mounted package; 3 leads
plastic surface mounted package; 3 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
collector current
total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
T
stg
T
j
T
amb
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
storage temperature
junction temperature
operating ambient
temperature
T
amb
≤
25
°C
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
−
−
−
−
−
−
−
−65
−
−65
500
250
250
200
250
250
150
+150
150
+150
mW
mW
mW
mW
mW
mW
mW
°C
°C
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
MIN.
50
50
5
100
100
MAX.
V
V
V
mA
mA
UNIT
2004 Aug 06
4
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
μm
copper strip line.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
input resistor
collector capacitance
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
CONDITIONS
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 1 mA
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
PDTC143T series
VALUE
250
500
500
625
500
500
833
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
MIN.
−
−
−
−
200
−
3.3
−
TYP.
−
−
−
−
−
−
4.7
−
MAX.
100
1
50
100
−
100
6.1
2.5
UNIT
nA
μA
μA
nA
mV
kΩ
pF
collector-emitter saturation voltage I
C
= 5 mA; I
B
= 0.25 mA
2004 Aug 06
5