PMEG4010EH; PMEG4010EJ;
PMEG4010ET
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 04 — 21 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG4010EH
PMEG4010EJ
PMEG4010ET
SOD123F
SOD323F
SOT23
JEITA
-
SC-90
-
JEDEC
-
-
TO-236AB
single
single
single
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
≤
1 A
Reverse voltage: V
R
≤
40 V
Very low forward voltage
Small SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1000 mA
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
540
Max
1
40
640
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PMEG4010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
SOD123F; SOD323F
1
1
001aab540
2
sym001
2
SOT23
1
2
3
anode
n.c.
cathode
1
2
3
1
3
2
n.c.
006aaa436
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG4010EH
PMEG4010EJ
PMEG4010ET
-
SC-90
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 3 leads
Version
SOD123F
SOD323F
SOT23
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
AB
AL
*AW
Type number
PMEG4010EH
PMEG4010EJ
PMEG4010ET
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMEG4010EH_EJ_ET_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 21 March 2007
2 of 11
NXP Semiconductors
PMEG4010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
Parameter
reverse voltage
forward current
repetitive peak forward
current
PMEG4010EH
PMEG4010EJ
PMEG4010ET
I
FSM
P
tot
non-repetitive peak forward
current
total power dissipation
PMEG4010EH
PMEG4010EJ
PMEG4010ET
T
j
T
amb
T
stg
[1]
[2]
[3]
Conditions
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
Min
-
-
Max
40
1
Unit
V
A
-
-
-
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[1][3]
[2][3]
[1][3]
[2][3]
[1]
[2]
7
7
5
9
A
A
A
A
-
-
-
-
-
-
-
-
−65
−65
375
830
350
830
280
420
150
+150
+150
mW
mW
mW
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Reflow soldering is the only recommended soldering method.
PMEG4010EH_EJ_ET_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 21 March 2007
3 of 11
NXP Semiconductors
PMEG4010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG4010EH
PMEG4010EJ
PMEG4010ET
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG4010EH
PMEG4010EJ
PMEG4010ET
[1]
[2]
[3]
[4]
[5]
Conditions
in free air
[1]
Min
Typ
Max
Unit
[2][4]
[3][4]
[2][4]
[3][4]
[2]
[3]
[5]
-
-
-
-
-
-
-
-
-
-
-
-
330
150
350
150
440
300
K/W
K/W
K/W
K/W
K/W
K/W
-
-
-
-
-
-
60
55
120
K/W
K/W
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
Typ
95
155
220
295
420
540
7
30
43
Max
130
210
270
350
470
640
20
100
50
Unit
mV
mV
mV
mV
mV
mV
µA
µA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 10 V
V
R
= 40 V
V
R
= 1 V;
f = 1 MHz
PMEG4010EH_EJ_ET_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 21 March 2007
4 of 11
NXP Semiconductors
PMEG4010EH/EJ/ET
1 A very low V
F
MEGA Schottky barrier rectifiers
10
3
I
F
(mA)
10
2
006aaa253
I
R
(µA)
10
5
(1)
006aaa254
10
4
10
3
(2)
(3)
10
(1)
(2)
(3)
(4)
(5)
10
2
10
(4)
1
1
10
−1
10
−2
(5)
10
−1
10
−2
0
0.1
0.2
0.3
0.4
0.5
0.6
V
F
(V)
10
−3
0
10
20
30
V
R
(V)
40
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
100
C
d
(pF)
80
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aaa255
60
40
20
0
0
10
20
30
V
R
(V)
40
f = 1 MHz; T
amb
= 25
°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG4010EH_EJ_ET_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 21 March 2007
5 of 11
Embedded System
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