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BSP250,115

Description
mosfet tape-7 mosfet
CategoryDiscrete semiconductor    The transistor   
File Size91KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSP250,115 Overview

mosfet tape-7 mosfet

BSP250,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconduc
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-73
package instructionPLASTIC, SMD, SC-73, 4 PIN
Contacts4
Manufacturer packaging codeSOT223
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power consumption environment5 W
Maximum power dissipation(Abs)1.65 W
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)140 ns
Maximum opening time (tons)80 ns
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP250
P-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC13b
1997 Jun 20

BSP250,115 Related Products

BSP250,115 BSP250,135
Description mosfet tape-7 mosfet mosfet tape13 mosfet
Brand Name NXP Semiconduc NXP Semiconduc
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SC-73 SC-73
Contacts 4 4
Manufacturer packaging code SOT223 SOT223
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V 30 V
Maximum drain current (Abs) (ID) 3 A 3 A
Maximum drain current (ID) 3 A 3 A
Maximum drain-source on-resistance 0.4 Ω 0.4 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power consumption environment 5 W 5 W
Maximum power dissipation(Abs) 1.65 W 1.65 W
Maximum pulsed drain current (IDM) 12 A 12 A
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 140 ns 140 ns
Maximum opening time (tons) 80 ns 80 ns
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