DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D119
BYD53 series
Fast soft-recovery controlled
avalanche rectifiers
Product specification
Supersedes data of 1996 Sep 18
1998 Dec 04
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
Available in ammo-pack.
handbook, 4 columns
BYD53 series
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec™
(1)
technology. The SOD81 package is
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BYD53D
BYD53G
BYD53J
BYD53K
BYD53M
BYD53U
BYD53V
V
R
continuous reverse voltage
BYD53D
BYD53G
BYD53J
BYD53K
BYD53M
BYD53U
BYD53V
I
F(AV)
average forward current
BYD53D to M
BYD53U and V
I
F(AV)
average forward current
BYD53D to M
BYD53U and V
I
FRM
repetitive peak forward current
BYD53D to M
BYD53U and V
T
tp
= 55
°C;
lead length = 10 mm
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
T
amb
= 65
°C;
PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
T
tp
= 55
°C;
see Figs 6 and 7
−
−
6.5
8.25
A
A
−
−
−
−
−
−
−
−
−
−
−
200
400
600
800
1000
1200
1400
0.75
0.85
V
V
V
V
V
V
V
A
A
PARAMETER
repetitive peak reverse voltage
−
−
−
−
−
−
−
200
400
600
800
1000
1200
1400
V
V
V
V
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
0.40
0.45
A
A
1998 Dec 04
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
SYMBOL
I
FRM
PARAMETER
repetitive peak forward current
BYD53D to M
BYD53U and V
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to
surge; inductive load switched off
see Fig.12
CONDITIONS
T
amb
= 65
°C;
see Figs 8 and 9
−
−
−
BYD53 series
MIN.
MAX.
3.6
4.45
5
A
A
A
UNIT
E
RSM
T
stg
T
j
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
−
−65
−65
10
+175
+175
mJ
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
BYD53D to M
BYD53U and V
V
F
forward voltage
BYD53D to M
BYD53U and V
V
(BR)R
reverse avalanche
breakdown voltage
BYD53D
BYD53G
BYD53J
BYD53K
BYD53M
BYD53U
BYD53V
I
R
reverse current
V
R
= V
RRMmax
; see Fig.15
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.15
t
rr
reverse recovery time
BYD53D to J
BYD53K and M
BYD53U and V
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.16
when switched from I
F
= 0.5 A
to I
R
= 1 A; measured at
I
R
= 0.25 A; see Fig.18
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1
100
V
V
V
V
V
V
V
µA
µA
I
F
= 1 A; see Figs 13 and 14
−
−
−
−
3.6
2.3
V
V
CONDITIONS
I
F
= 1 A; T
j
= T
j max
;
see Figs 13 and 14
MIN.
−
−
TYP.
−
−
MAX.
2.1
1.7
V
V
UNIT
−
−
−
−
−
−
−
20
30
75
150
−
ns
ns
ns
pF
1998 Dec 04
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
SYMBOL
dI
R
--------
dt
PARAMETER
maximum slope of reverse
recovery current
BYD53D to J
BYD53K and M
BYD53U and V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
lead length = 10 mm
CONDITIONS
when switched from I
F
= 1 A to
V
R
≥
30 V and dI
F
/dt =
−1
A/µs;
see Fig.19
MIN.
BYD53 series
TYP.
MAX.
UNIT
−
−
−
−
−
−
7
6
5
A/µs
A/µs
A/µs
VALUE
60
120
UNIT
K/W
K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.17.
For more information please refer to the
‘General Part of associated Handbook’.
1998 Dec 04
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled
avalanche rectifiers
GRAPHICAL DATA
MGM267
BYD53 series
handbook, halfpage
1.0
IF(AV)
(A)
handbook, halfpage
1.6
MLC303
I F(AV)
(A)
1.2
0.8
0.6
0.8
0.4
lead length 10 mm
0.4
0.2
0
0
40
80
120
160
200
Ttp (°C)
0
0
BYD53U and V
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
100
T tp (
o
C)
200
BYD53D to M
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0.6
MGM266
handbook, halfpage
0.8
MLC304
IF(AV)
(A)
0.4
I F(AV)
(A)
0.6
0.4
0.2
0.2
0
0
40
80
120
160
200
Tamb (°C)
0
0
100
Tamb (
o
C)
200
BYD53D to M
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
BYD53U and V
a = 1.42; V
R
= V
RRMmax
;
δ
= 0.5.
Device mounted as shown in Fig. 17.
Switched mode application.
Fig.4
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
Fig.5
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
1998 Dec 04
5
Microcontroller MCU
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