FDD8444L_F085 N-Channel PowerTrench
®
MOSFET
January 2009
FDD8444L_F085
®
N-Channel PowerTrench MOSFET
40V, 50A, 6.0mΩ
Features
Typ r
DS(on)
= 3.8mΩ at V
GS
= 5V, I
D
= 50A
Typ Q
g(tot)
= 46nC at V
GS
= 5V
Low Miller Charge
Low Q
rr
Body Diode
UIS Capability (Single Pulse/ Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
A
REE
I
DF
tm
Applications
Automotive Engine Control
Powertrain Management
Solenoid and Motor Drivers
Electronic Transmission
Distributed Power Architecture and VRMs
Primary Switch for 12V and 24V systems
M
E
N
TA
TIO
L
E
N
MP
©2009
Fairchild Semiconductor Corporation
FDD8444L_F085 Rev A (W)
LE
1
www.fairchildsemi.com
FDD8444L_F085 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Symbol
V
DSS
Drain to Source Voltage
V
GS
I
D
E
AS
P
D
Gate to Source Voltage
Drain Current Continuous (T
C
< 150°C, V
GS
= 10V)
o
Parameter
Ratings
40
±20
(Note 1)
o
Units
V
V
A
mJ
W
W/
o
C
o
C
50
16
See Figure 4
Continuous (T
amb
= 25 C, V
GS
= 10V, with R
θJA
= 52 C/W)
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
o
C
(Note 2)
295
153
1.02
-55 to +175
T
J
, T
STG
Operating and Storage Temperature
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area
2
0.98
52
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD8444L
Device
FDD8444L_F085
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 32V,
V
GS
= 0V
V
GS
= ±20V
T
J
= 150 C
o
40
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 50A, V
GS
= 10V
I
D
= 50A, V
GS
= 5V
r
DS(on)
Drain to Source On Resistance
I
D
= 50A, V
GS
= 4.5V
I
D
= 50A, V
GS
= 5V,
T
J
= 175
o
C
1
-
-
-
-
1.8
3.5
3.8
4.0
6.8
3
5.2
6.0
6.5
10.7
mΩ
V
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
f = 1MHz
V
GS
= 0 to 5V
V
GS
= 0 to 2V
V
DD
= 20V
I
D
= 50A
I
g
= 1.0mA
-
-
-
-
-
-
-
-
-
5530
605
400
1.7
46
5.4
16.3
10.9
21
-
-
-
-
60
7
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
FDD8444L_F085 Rev A (W)
2
www.fairchildsemi.com
FDD8444L_F085 N-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-Off Time
V
DD
= 20V, I
D
= 50A
V
GS
= 5V, R
GS
= 2Ω
-
-
-
-
-
-
-
18.7
46
42
19.2
-
104
-
-
-
-
96
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 50A
I
SD
= 25A
I
F
= 50A, dI
F
/dt = 100A/µs
-
-
-
-
0.9
0.8
34
29
1.25
1.0
44
38
V
ns
nC
Notes:
1:
Package current limitation is 50A.
2:
Starting T
J
= 25
o
C, L = 0.37mH, I
AS
= 40A.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the
requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
FDD8444L_F085 Rev A (W)
3
www.fairchildsemi.com
FDD8444L_F085 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
POWER DISSIPATION MULTIPLIER
1.2
I
D
, DRAIN CURRENT (A)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
o
C
)
T
C
, CASE TEMPERATURE
(
175
V
GS
= 5V
V
GS
= 10V
CURRENT LIMITED
BY PACKAGE
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE
(
o
C
)
175
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JC
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.20
0.10
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
0.01
-5
10
SINGLE PULSE
10
-4
Figure 3. Normalized Maximum Transient Thermal Impedance
4000
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
10
-1
10
0
I
DM
,
PEAK CURRENT (A)
1000
100
10
-5
10
SINGLE PULSE
10
-4
10
10
t, RECTANGULAR PULSE DURATION(s)
-3
-2
10
-1
10
0
Figure 4. Peak Current Capability
FDD8444L_F085 Rev A (W)
4
www.fairchildsemi.com
FDD8444L_F085 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
1000
I
D
, DRAIN CURRENT (A)
10us
500
I
AS
, AVALANCHE CURRENT (A)
100
100us
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
10
LIMITED
BY PACKAGE
STARTING T
J
= 25 C
o
10
STARTING T
J
= 150 C
o
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
o
TC = 25 C
1ms
10ms
DC
0.1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
0.1
1
10
100
1000
t
AV
, TIME IN AVALANCHE (ms)
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
200
100
I
D
, DRAIN CURRENT (A)
80
60
40
20
0
0.5
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V
V
GS
= 5V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
V
DD
= 5V
T
J
= 175
o
C
T
J
= 25
o
C
T
J
= -55
o
C
150
V
GS
= 4V
100
50
V
GS
= 3V
1.0
1.5
2.0
2.5
3.0
3.5
0
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
I
D
=
50A
r
DS(on)
, DRAIN TO SOURCE
ON-RESISTANCE
(
m
Ω
)
25
20
15
10
5
0
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-80
I
D
= 50A
V
GS
= 10V
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5% MAX
T
J
= 175
o
C
T
J
= 25 C
o
3
4
5
6
7
8
9
V
GS
, GATE TO SOURCE VOLTAGE
(
V
)
10
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE
(
o
C
)
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8444L_F085 Rev A (W)
5
www.fairchildsemi.com
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