PD - 94607A
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
G
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
C
V
CES
= 600V
I
C
= 7.6A, T
C
=100°C
t
sc
> 10µs, T
J
=150°C
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
V
CE(on)
typ. = 2.1V
D
2
Pak
TO-220
IRGB4B60KD1 IRGS4B60KD1
TO-262
IRGSL4B60KD1
Units
V
A
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
11
7.6
22
22
11
6.7
22
±20
63
31
-55 to +175
c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
V
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient
Weight
Junction-to-Ambient (PCB Mount, steady state)
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
2.4
6.1
–––
62
40
–––
Units
°C/W
d
g
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1
05/28/03
IRGB/S/SL4B60KD1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
—
0.28
2.1
2.5
2.6
4.5
-8.1
1.7
1.0
136
722
1.4
1.3
1.2
—
—
—
2.5
2.8
2.9
5.5
—
—
150
600
2400
2.0
1.8
1.7
±100
nA
V
µA
V
V
Conditions
V
GE
= 0V, I
C
= 500µA
Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
—
—
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
V
FM
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
—
—
3.5
—
—
—
—
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 4.0A, V
GE
= 15V, T
J
= 25°C
V
I
C
= 4.0A, V
GE
= 15V, T
J
= 150°C
I
C
= 4.0A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 250µA
5,6,7
9,10,11
9,10,11
12
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
S V
CE
= 50V, I
C
= 4.0A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 4.0A
I
F
= 4.0A, T
J
= 150°C
I
F
= 4.0A, T
J
= 175°C
V
GE
= ±20V
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
E
rec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
1.7
6.5
73
47
120
22
18
100
66
130
83
220
22
18
120
79
190
25
6.2
—
—
—
80
53
130
28
23
110
80
150
140
280
27
22
130
89
—
—
—
pF
V
GE
= 0V
V
CC
= 30V
ns
µJ
ns
µJ
nC
I
C
= 4.0A
V
CC
= 400V
V
GE
= 15V
Conditions
Ref.Fig.
23
CT1
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 25°C
CT4
e
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 25°C
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 150°C
CT4
13,15
WF1,WF2
14,16
CT4
WF1
WF2
CT4
e
I
C
= 4.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100Ω, L = 2.5mH
T
J
= 150°C
22
FULL SQUARE
10
—
—
—
—
81
93
6.3
—
100
—
7.9
µs
µJ
ns
A
f = 1.0MHz
T
J
= 150°C, I
C
= 22A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100Ω
T
J
= 150°C, Vp = 600V, R
G
= 100Ω
V
CC
=360V,V
GE
= +15V to 0V
T
J
= 150°C
V
CC
= 400V, I
F
= 4.0A, L = 2.5mH
V
GE
= 15V, R
G
= 100Ω
4
CT2
CT3
WF4
17,18,19
20,21
CT4,WF3
Note
to
are on page 16
2
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IRGB/S/SL4B60KD1
12
10
8
6
4
70
60
50
Ptot (W)
IC (A)
40
30
20
2
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
10
0
0
20
40
60
80 100 120 140 160 180
T C (°C)
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
100
100
10
100µs
10
IC A)
IC (A)
1
1ms
0.1
10ms
1
DC
0.01
0
1
10
100
1000
10000
VCE (V)
0
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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3
IRGB/S/SL4B60KD1
30
25
20
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
30
25
20
15
10
5
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
15
10
5
0
0
2
4
6
VCE (V)
8
10
12
0
2
4
6
VCE (V)
8
10
12
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
25
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
35
30
25
IF (A)
20
ICE (A)
15
20
15
10
-40°C
25°C
150°C
10
5
5
0
0
2
4
6
VCE (V)
8
10
12
0
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80µs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80µs
4
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IRGB/S/SL4B60KD1
20
18
16
14
VCE (V)
VCE (V)
20
18
16
14
ICE = 2.0A
ICE = 4.0A
ICE = 8.0A
12
10
8
6
4
2
0
5
10
VGE (V)
15
20
5
10
VGE (V)
15
20
ICE = 2.0A
ICE = 4.0A
ICE = 8.0A
12
10
8
6
4
2
0
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
ID, Drain-to-Source Current
(Α
)
30
16
14
VCE (V)
25
T J = 25°C
20
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 2.0A
ICE = 4.0A
ICE = 8.0A
15
TJ = 150°C
10
5
0
15
20
0
5
10
15
20
VGS , Gate-to-Source Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 360V; tp = 10µs
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