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2N7008-G

Description
mosfet 60v 7.5ohm
CategoryDiscrete semiconductor    The transistor   
File Size323KB,3 Pages
ManufacturerSupertex
Environmental Compliance
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2N7008-G Overview

mosfet 60v 7.5ohm

2N7008-G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance7.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)5 pF
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N7008
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-Channel devices
General Description
The Supertex 2N7008 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
2N7008-G
Package Option
TO-92
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
60
7.5
500
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature
*
Pin Configuration
Value
BV
DSS
BV
DGS
±30V
DRAIN
SOURCE
-55°C to +150°C
+300°C
GATE
TO-92
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
Product Marking
2N
7 0 0 8
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

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2N7008-G 2N7008-G P005 2N7008-G P013 2N7008-G P002 2N7008-G P014 2N7008-G P003
Description mosfet 60v 7.5ohm mosfet N-channel mosfet mosfet N-channel mosfet mosfet N-channel mosfet mosfet N-channel mosfet mosfet N-channel mosfet
Manufacture - Supertex Supertex Supertex Supertex -
Product Category - MOSFET MOSFET MOSFET MOSFET -
RoHS - Yes Yes Yes Yes -
Transistor Polarity - N-Channel N-Channel N-Channel N-Channel -
Mounting Style - Through Hole Through Hole Through Hole Through Hole -
Package / Case - TO-92-3 TO-92-3 TO-92-3 TO-92-3 -
Packaging - Reel Reel Reel Reel -
Factory Pack Quantity - 2000 2000 2000 2000 -

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