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Z0109NN 5AA4

Description
triacs 1.0 amp 800 volt
Categorysemiconductor    Discrete semiconductor   
File Size56KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance  
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Z0109NN 5AA4 Overview

triacs 1.0 amp 800 volt

Z0109NN 5AA4 Parametric

Parameter NameAttribute value
ManufactureSTMicroelectronics
Product CategoryTriacs
RoHSYes
Non Repetitive On-State Curre8.5 A
Rated Repetitive Off-State Voltage VDRM800 V
Off-State Leakage Current @ VDRM IDRM5 uA
On-State Voltage1.56 V
Holding Current Ih Max10 mA
Gate Trigger Voltage - Vg1.3 V
Gate Trigger Current - Ig10 mA
Mounting StyleSMD/SMT
Package / CaseSOT-223
PackagingReel
Factory Pack Quantity1000
®
Z01xxxN
SENSITIVE GATE TRIACS
FEATURES
I
T(RMS)
= 1A
V
DRM
= 400V to 800V
I
GT
3mA to
25mA
A1
A2
G
A2
DESCRIPTION
The Z01xxxN series of triacs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
high volume applications using surface mount
technology.
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
I
TSM
Parameter
RMS on-state current
(360
°
conductionangle)
Non repetitive surge peak on-state current
(T
j
initial = 25
°
C )
I
2
t Value for fusing
Critical rate of rise of on-state current
di
G
/dt = 0.1 A/µs.
I
G
= 50 mA
Ttab= 90
°C
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
T
stg
T
j
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s
Value
1
8.5
8
0.35
10
50
- 40, + 150
- 40, + 125
260
°
C
°C
A
2
s
A/
µ
s
Unit
A
A
SOT223
(Plastic)
I
2
t
dI/dt
Symbol
V
DRM
V
RRM
Parameter
D
Repetitive peak off-state voltage
T
j
= 125°C
400
Voltage
M
600
S
700
N
800
Unit
V
May 1998 Ed: 1A
1/6

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