Freescale Semiconductor
Technical Data
Document Number: MRF1513N
Rev. 12, 6/2009
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common source amplifier applications in 7.5 volt
portable and 12.5 volt mobile FM equipment.
D
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 3 Watts
Power Gain — 15 dB
Efficiency — 65%
•
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
Features
•
Excellent Thermal Stability
G
•
Characterized with Series Equivalent Large - Signal
Impedance Parameters
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
S
•
In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 inch Reel.
MRF1513NT1
520 MHz, 3 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
2
31.25
0.25
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
4
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
Rating
3
Package Peak Temperature
260
Unit
°C
R
θJC
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
MRF1513NT1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 60
μA)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Common - Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 3 Watts, I
DQ
= 50 mA, f = 520 MHz)
G
ps
η
—
—
15
65
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
33
16.5
2.2
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
1
—
1.7
0.65
2.1
—
Vdc
Vdc
I
DSS
I
GSS
—
—
—
—
1
1
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
MRF1513NT1
2
RF Device Data
Freescale Semiconductor
V
GG
C9
C8
B2
+
C7
R4
B1
R3
C17
C16
C15
+
V
DD
C14
L1
C6
R2
Z7
R1
N1
RF
INPUT
C1
C2
C3
C4
C5
Z1
Z2
Z3
Z4
Z5
Z6
DUT
C10
C11
C12
C13
Z8
Z9
Z10
Z11
N2
RF
OUTPUT
B1, B2
C1, C13
C2, C3, C4, C10,
C11, C12
C5, C6, C17
C7, C14
C8, C15
C9, C16
L1
N1, N2
R1, R3
R2
Short Ferrite Beads, Fair Rite Products
#2743021446
240 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
120 pF, 100 mil Chip Capacitors
10
mF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
mF,
100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15
Ω
Chip Resistors (0805)
1 kΩ, 1/8 W Resistor
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Z11
Board
33 kΩ, 1/8 W Resistor
0.236″ x 0.080″ Microstrip
0.981″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.098″ x 0.080″ Microstrip
0.192″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.705″ x 0.080″ Microstrip
0.342″ x 0.080″ Microstrip
0.347″ x 0.080″ Microstrip
0.846″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils, 2 oz. Copper
Figure 1. 450 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 - 520 MHz
5
470 MHz
Pout , OUTPUT POWER (WATTS)
4
520 MHz
3
450 MHz 500 MHz
IRL, INPUT RETURN LOSS (dB)
−5
0
V
DD
= 12.5 Vdc
−10
500 MHz
470 MHz
2
1
V
DD
= 12.5 Vdc
0
0
0.05
0.10
0.15
P
in
, INPUT POWER (WATTS)
0.20
−15
520 MHz
−20
0
1
450 MHz
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MRF1513NT1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 450 - 520 MHz
16
15
14
GAIN (dB)
13
12
11
V
DD
= 12.5 Vdc
10
0
1
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
20
0
1
2
3
P
out
, OUTPUT POWER (WATTS)
4
5
70
450 MHz
520 MHz
500 MHz
470 MHz
Eff, DRAIN EFFICIENCY (%)
60
450 MHz
50
500 MHz
520 MHz
470 MHz
40
30
V
DD
= 12.5 Vdc
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
6
Pout , OUTPUT POWER (WATTS)
450 MHz
470 MHz
500 MHz
520 MHz
70
65 520 MHz
60 470 MHz
55
50
45
40
600
0
100
200
300
400
I
DQ
, BIASING CURRENT (mA)
500
600
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
500 MHz
450 MHz
4
3
2
1
0
100
200
300
400
I
DQ
, BIASING CURRENT (mA)
V
DD
= 12.5 Vdc
P
in
= 20.3 dBm
500
Figure 6. Output Power versus Biasing Current
Eff, DRAIN EFFICIENCY (%)
5
Figure 7. Drain Efficiency versus
Biasing Current
5
Pout , OUTPUT POWER (WATTS)
80
70
60
450 MHz
50
40
30
20
8
9
10
11
12
13
14
15
16
8
9
10
11
12
13
14
15
16
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
P
in
= 20.3 dBm
I
DQ
= 50 mA
500 MHz
470 MHz
520 MHz
4
3
450 MHz
520 MHz
2
470 MHz
1
0
500 MHz
P
in
= 20.3 dBm
I
DQ
= 50 mA
Figure 8. Output Power versus Supply Voltage
Eff, DRAIN EFFICIENCY (%)
Figure 9. Drain Efficiency versus Supply Voltage
MRF1513NT1
4
RF Device Data
Freescale Semiconductor
V
GG
C9
C8
B2
+
C7
R4
B1
R3
C16
C15
C14
+
V
DD
C13
L1
C6
R2
Z7
R1
N1
RF
INPUT
C1
C2
C3
C4
C5
Z1
Z2
Z3
Z4
Z5
Z6
DUT
C10
C11
C12
Z8
Z9
Z10
N2
RF
OUTPUT
B1, B2
C1, C12
C2, C3, C4,
C10, C11
C5, C6, C16
C7, C13
C8, C14
C9, C15
L1
N1, N2
R1
R2
Short Ferrite Bead, Fair Rite Products
#2743021446
330 pF, 100 mil Chip Capacitors
1 to 20 pF Trimmer Capacitors
120 pF, 100 mil Chip Capacitors
10
μF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
mF,
100 mil Chip Capacitors
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15
Ω
Chip Resistor (0805)
1 kΩ, 1/8 W Resistor
R3
R4
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Board
15
Ω
Chip Resistor (0805)
33 kΩ, 1/8 W Resistor
0.253″ x 0.080″ Microstrip
0.958″ x 0.080″ Microstrip
0.247″ x 0.080″ Microstrip
0.193″ x 0.080″ Microstrip
0.132″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.494″ x 0.080″ Microstrip
0.941″ x 0.080″ Microstrip
0.452″ x 0.080″ Microstrip
Glass Teflon
®
, 31 mils, 2 oz. Copper
Figure 10. 400 - 470 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 400 - 470 MHz
5
400 MHz
Pout , OUTPUT POWER (WATTS)
4
470 MHz
3
IRL, INPUT RETURN LOSS (dB)
440 MHz
V
DD
= 12.5 Vdc
−5
0
−10
440 MHz
400 MHz
2
1
V
DD
= 12.5 Vdc
0
0
0.02
0.08
0.04
0.06
P
in
, INPUT POWER (WATTS)
0.10
0.12
−15
470 MHz
−20
0
1
3
2
P
out
, OUTPUT POWER (WATTS)
4
5
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss
versus Output Power
MRF1513NT1
RF Device Data
Freescale Semiconductor
5
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