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PSMN2R6-60PSQ

Description
mosfet N-channel mosfet
Categorysemiconductor    Discrete semiconductor   
File Size251KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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PSMN2R6-60PSQ Overview

mosfet N-channel mosfet

PSMN2R6-60PSQ Parametric

Parameter NameAttribute value
ManufactureNXP
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Curre150 A
Rds On - Drain-Source Resistance5.6 mOhms
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge140 nC
Pd - Power Dissipati326 W
Mounting StyleThrough Hole
Package / CaseTO-220-3
PackagingTube
Fall Time58 ns
Rise Time50 ns
Factory Pack Quantity1000
Typical Turn-Off Delay Time87 ns
PSMN2R6-60PS
5 February 2013
TO
-2
20A
B
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product
design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Standard level gate
3. Applications
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 48 V; V
GS
= 10 V;
Fig. 13; Fig. 14
-
-
140
43.7
-
-
nC
nC
[1]
Min
-
-
-
Typ
-
-
-
Max
60
150
326
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
1.97
2.6
Dynamic characteristics
Q
G(tot)
Q
GD
total gate charge
gate-drain charge
[1]
Continuous current is limited by package.
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