FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
FEATURES
• Power pack
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
3
2
1
• Low thermal resistance
• High forward surge capability
• Solder dip 260 °C, 40 s
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
= 15 A
T
J
max.
Package
Diode variations
30 A
50 V, 100 V, 150 V, 200 V, 300 V,
400 V, 500 V, 600 V
300 A
35 ns, 50 ns
0.95 V, 1.3 V, 1.5 V
150 °C
TO-247AD (TO-3P)
Dual common cathode
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Operating storage and temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
FEP
30AP
50
35
50
FEP
30BP
100
70
100
FEP
30CP
150
105
150
FEP
30DP
200
140
200
30
300
-55 to +150
FEP
30FP
300
210
300
FEP
30GP
400
280
400
FEP
30HP
500
350
500
FEP
30JP
600
420
600
UNIT
V
V
V
A
A
°C/W
Revision: 23-Feb-16
Document Number: 88597
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
FEP
30FP
FEP
30GP
1.3
10
I
R
500
35
175
50
145
μA
FEP
30HP
1.5
FEP
30JP
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage per diode
Maximum DC reverse current at
rated DC blocking voltage
per diode
Maximum reverse recovery time
per diode
Typical junction capacitance
per diode
TEST
SYMBOL
CONDITIONS
15.0 A
T
C
= 25 °C
T
C
= 100 °C
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
V
F
UNIT
V
0.95
t
rr
C
J
ns
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JC
(1)
FEP
30AP
FEP
30BP
FEP
30CP
FEP
30DP
1.0
FEP
30FP
FEP
30GP
FEP
30HP
FEP
30JP
UNIT
°C/W
Note
(1)
Thermal resistance from junction to case per diode mounted on heatsink
ORDERING INFORMATION
(Example)
PACKAGE
TO-247AD
PREFERRED P/N
FEP30JP-E3/45
UNIT WEIGHT (g)
6.15
PACKAGE CODE
30
BASE QUANTITY
30/tube
DELIVERY MODE
Tube
Revision: 23-Feb-16
Document Number: 88597
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP30xP-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
36
Resistive or Inductive Load
1000
Instantaneous Reverse Current (μA)
50 V to 200 V
300 V to 600 V
100
T
J
= 125 °C
Average Forward Current (A)
30
24
10
12
1
T
J
= 100 °C
6
0.1
T
J
= 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
0
0
50
100
150
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
300
1000
T
C
= 100 °C
8.3 ms
Single
Half
Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward
Surge
Current (A)
200
150
Junction Capacitance (pF)
250
100
100
50
50 V to 400 V
500 V to 600 V
10
0
1
10
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
Instantaneous Forward Current (A)
Pulse Width = 300 μs
1 % Duty Cycle
10
T
J
= 125 °C
1
T
J
= 25 °C
50 V to 200 V
300 V to 400 V
500 V to 600 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Revision: 23-Feb-16
Document Number: 88597
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FEP30xP-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
0.078 (1.98) REF.
10
Vishay General Semiconductor
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1° REF.
Both Sides
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
PIN 1
PIN 3
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Revision: 23-Feb-16
Document Number: 88597
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000